ZETEX ZXT1M322 Technical data
MPPS™ Miniature Package Power Solutions
12V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
= -12V; R
V
CEO
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
th
generation low saturation transistor offers extremely low on state
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage (-140mV@ -1A)
= 60m ;IC= -4A
SAT
ZXT1M322
2mm x 2mm MLP
(single die)
C
B
•
hFEspecified up to -10A
•
IC= -4A Continuous Collector Current
•
2mm x 2mm MLP
APPLICATIONS
•
DC - DC Converters (FET Driving)
•
Charging Circuits
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL TAPE
ZXT1M322TA 7
ZXT1M322TC 13ⴕ
WIDTH
ⴕⴕ 8mm 3000
ⴕ 8mm 10000
DEVICE MARKING
S1
ISSUE 2 - JUNE 2002
E
PINOUT
QUANTITY
PER REEL
2mm x 2mm Single MLP
underside view
1
ZXT1M322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current (a) I
Base Current I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Power Dissipation at TA=25°C (d)
Linear Derating Factor
Power Dissipation at TA=25°C (e)
Linear Derating Factor
Operating and Storage Temperature Range T
CM
C
B
P
P
P
P
CBO
CEO
EBO
D
D
D
D
j:Tstg
-20 V
-12 V
-7.5 V
-12 A
-4 A
-1000 mA
1.5
12
mW/°C
2.45
19.6
mW/°C
1
8
mW/°C
3
24
mW/°C
-55 to +150 °C
W
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
Junction to Ambient (d) R
Junction to Ambient (e) R
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t⭐5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the
package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
θJA
θJA
θJA
θJA
2
83 °C/W
51 °C/W
125 °C/W
42 °C/W
ISSUE 2 - JUNE 2002
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