Zetex ZXT14P12DXTA, ZXT14P12DXTC Datasheet
ZXT14P12DX
SuperSOT4™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
=-12V; R
CEO
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
characterised up to 20A
h
•
FE
I
=6A Continuous Collector Current
•
C
• MSOP8 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXT14P12DXTA 7
ZXT14P12DXTC 13
= 16m ;IC= -6A
SAT
(inches)
TAPE WIDTH
(mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
B
E
E
E
B
Top View
MSOP8
C
1
2
3
4
E
8
C
C
7
C
6
5
C
DEVICE MARKING
T14P12DX
ISSUE 1 - MARCH 2000
1
ZXT14P12DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
j:Tstg
-20 V
-12 V
-7.5 V
-40 A
-6 A
-500 mA
1.1
8.8
1.8
14.4
-55 to +150 °C
mW/°C
mW/°C
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10secs
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
2
113 °C/W
70 °C/W
ISSUE 1 - MARCH 2000
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