Zetex ZXT13N50DE6TA, ZXT13N50DE6TC Datasheet

ZXT13N50DE6

C

C

SuperSOT4™
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY
V

=50V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 10A

h

•

FE

I

=4A Continuous Collector Current

•

C

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXT13N50DE6TA 7 8mm embossed 3000 units

ZXT13N50DE6TC 13 8mm embossed 10000 units

= 36m ;IC= 4A

SAT

(inches)

TAPE WIDTH
(mm)

QUANTITY
PER REEL

SOT23-6

C

C

B

Top View

E

DEVICE MARKING

N50D

ISSUE 1 - NOVEMBER 1999

1

ZXT13N50DE6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

j:Tstg

100 V

50 V

7.5 V

10 A

4A

500 mA

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

ISSUE 1 - NOVEMBER 1999

2

113 °C/W

73 °C/W