Zetex ZXT12P40DXTA, ZXT12P40DXTC Datasheet

ZXT12P40DX

SuperSOT4™
DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY
V

=-40V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 5A

h

•

FE

I

=2A Continuous Collector Current

•

C

• MSOP8 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXT12P40DXTA 7

ZXT12P40DXTC 13

= 75m ;IC= -2A

SAT

(inches)

B1

TAPE WIDTH
(mm)

12mm embossed

12mm embossed

C1

E1

QUANTITY
PER REEL

1000 units

4000 units

B2

E1
B1
E2

B2

Top View

MSOP8

1
2

3

4

C2

8
7
6
5

E2

C1
C1
C2

C2

DEVICE MARKING

T12P40DX

ISSUE 1 - MARCH 2000

1

ZXT12P40DX

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor

Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor

Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

P

D

j:Tstg

-50 V

-40 V

-7.5 V

-5 A

-2 A

-500 mA

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

W

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

ISSUE 1 - MARCH 2000

2

143 °C/W

100 °C/W

120 °C/W