Datasheet ZXRD1000 Datasheet (ZETEX)

查询ZXM64N02X供应商

HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS

DESCRIPTION

The ZXRD1000 series provides complete control and protection functions for a high efficiency (> 95%) DC-DC converter solution. The choice of external MOSFETs allow the designer to size devices according to ap plication. The ZXRD1000 series uses advanced DC-DC converter techniques to provide synchronous drive capability, using innovative circuits that allow easy and cost effective implementation of shoot through protection. The

FEATURES

• > 95% Efficiency

• Fixed frequency (adjustable) PWM

• Voltage mode to ensure excellent stability &

transient response

• Low quiescent current in shutdown mode,15µA

• Low battery flag

• Output down to 2.0V

• Overload protection

• Demonstration boards available

• Synchronous or non-synchronous operation

• Cost effective solution

• N or P channel MOSFETs

• QSOP16 package

ZXRD1000 SERIES

ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple adjustment of the fixed PWM switching frequency. The controller is available with fixed outputs of 5V or

3.3V and an adjustable (2.0 to 12V) output.

• Fixed 3.3, 5V and adjustable outputs

• Programmable soft st art

APPLICATIONS

• High efficiency 5 to 3.3V converters up to 4A

• Sub-notebook comp ut er s

• Embedded proce s s or power supply

• Distributed power supply

• Portable in s t ruments

• Local on card conversion

• GPS systems

Very high efficiency SimpleSyncTM converter.

4.5-10V

330pF

IC1

GNDG

DRIVE

Bootstrap

SENSE+

SENSE -

Comp

PWR

C6 1µF

CX1

0.022µF

680R

22µF

SHDN

SET

1µF

LBF

Delay

Decoup

INT

1µF C4

R3 3k

Shut Down

Low input flag

68µF

R1 100k

1µF

ISSUE 4 - OCTOBER 2000

D2 BAT54

ZXM64N02X

C11 1µF

ZXM64N02X

L1 15µH

2.2µF

ZHCS1000

0.01R

SENSE

Cx2

10k

0.01µF

x2 680µF

R5 6k

OUT

120µF

3.3V 4A

OUT

C9 1µF

C10

1µF

RX 2k7

10k

BAT54

ZXRD1000 SERIES

ABSOLUTE MAXIMUM RATINGS

Input without bootstrap (P suffix) 20V Input with bootstrap(N suffix) 10V Bootstrap voltage 20V Shutdown pin V LB

pin V

SET

IN IN

SENSE

+, R

SENSE -

Power dissipation 610mW (Note 4) Operating temperature -40 to +85°C Storage temperature -55 to +125°C

ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) T

Symbol Parameter Conditions Min Typ Max Unit

IN(min)

(Note 1)

DRIVE

osc

(Note 5)

osc(tol)

MAX

RSENSE

CMRSENSE

LBF

SET

LBF

OUT

LBF

HYST

LBF

SINK

SHDN

Min. Operating Voltage No Output Device 4.5 V Feedback Voltage V

=5V,IFB=1mA 1.215 1.24 1.265 V

4.5<V 50µA<I

Gate Output Drive Capability CG=2200pF(Note 2)

=1000pF

= 4.5V to maximim

supply (Note 3) Supply Current VIN=5V 1620mA Shutdown Current V

SHDN

Operating frequency range Frequency with timing capacitor C3=1300pF

=330pF

Oscillator Tol. Max Duty Cycle N Channel

P Channel R

voltage differentia l -40 to +85°C 50 mV

SENSE

Common mode range of V

RSENSE

-40 to +85°C 2 V Low Battery Flag set voltage 1.5 V Low Battery Flag output Active Low 0.2 0.4 V Low Battery Fla g Hystere sis 10 20 50 mV Low Battery Flag Sink Current -40 to +85°C 2 mA Shutdown Threshold Voltage Low(off)

High(on) 1.5

Shutdown Pin Source Current 10

=25°C

amb

<18V 1.213 1.24 1.267 V

<1mA,VIN=5V

1.215 1.24 1.265 V 60

= 0V;VIN=5V 15 50

300 kHz 50 200

±25

15 0

100%%

IN IN

0.25 V

ns ns

µA

V V

V µA

Note 1. V

has a different function between fixed and adjustable controller options.

Note 2. 2200pF is the maximum recommended gate capacitance. Note 3. Maximum supply for P phase controllers is 18V,maximum supply for N phase controllers is 10V. Note 4. See V

derating graph in Typical Characteristics.

Note 5. The maximum frequency in this application is 300kHz. For higher frequency operation contact Zetex Applications Department.

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

TYPICAL CHARACTERISTICS

202

201

200

(kHz)

199

OSC

198

197

4681012141618

VIN(V)

FOSC v VIN

1.244

1.242

(V)

1.24

1.238

1.236

4681012141618

VIN (V)

VFB v VIN

C3=330pF

OUT

=3.3V

210

205

(kHz)

200

OSC

195

190

-40 -20 0 20 40 60 80 100

VIN=5V C3=330pF

Temperature (°C)

FOSC v Temperature

1.25

VIN=5V

OUT

=3.3V

1.245

(V)

1.235

1.24

1.23

-40 -20 0 20 40 60 80 100

Temperature (°C)

VFB v Temperature

1.02

SET

1.01

1.00

Normalised LB

0.99 4681012141618

Normalised LBSET v VIN

ISSUE 4 - OCTOBER 2000

VIN (V)

VIN=5V

1.005

SET

1.000

Normalised LB

0.995

-40 -20 0 20 40 60 80 100

Temperature (°C)

Normalised LBSET v Temperature

ZXRD1000 SERIES

TYPICAL CHARACTERISTICS

Supply Current (mA)

VIN(V)

Supply Current v V

N Phase Device

300

200

(kHz)

OSC

100

0 100pF

1nF 10nF

Ti ming Capacitance

OSC

v Capacitance

Vin=5V

Supply Current (mA)

4 6 8 101214 1618

VIN(V)

Supply Current v V

P Phase Device

Current Lim i t (A )

VIN=5V

OUT=3.3V

10 20 30 40 50

RSENSE (m⍀)

Current Limit v R

204681012141618

SENSE

(V)

-40 -20 0 20 40 60 80 100

Temperature (°C)

VINDerating v Temperature

CG=2200pF

ISSUE 4 - OCTOBER 2000

DETAILED DESCRIPTION

The ZXRD1000 series can be configured to use either N or P channel MOSFETs to suit most applications. The most popular format, an all N channel synchronous solution gives the optimum efficiency. A feature of the ZXRD1000 series solution is the unique method of ge nerating the synchronous driv e, called SimpleSync . Most solutions use an additional output from the controller, inverted and d elayed fr om the main switch drive. The ZXRD1000 series solution uses a simple overwindin g on the main ch oke (wound on the same core at no real cost penalty) plus a small ferrite bead . This means that the synchronous FET is only enhanced when the main FET is turned off. This reduces the ‘blanking period’ required for shootthrough protection, increasing efficiency and al lowing smaller catch diodes to be used, making the controller simpler and less costly by avoiding complex timing circuitry. Included on chip are numerous f unctions that allow flexibility to suit most applications. The nominal switching frequency (200kHz) can be adjusted by a simple timing capacitor, C3. A low battery detect circuit is also provided. Off the shelf components are available from major manufacturers such as Sumida to provide either a single winding inductor for non-synchronous applications or a coil with an over-winding for synchronous applications. The combination of these switching characteristics, innovative circuit design an d excellent user flexibility, make the ZXRD1000 series DC-DC solutions some of the smallest and most cost effective and electrically efficient currently available. Using Zetex’s HDMOS low R for the main and synchronous switch, efficiency can peak at upto 95% and remains high over a wide range of operating currents. Programmabl e soft start can also be adjusted via the capacitor, C7, in the compensation loop.

devices, ZXM64N02X

DS(on)

What is SimpleSyncTM?

Conventional Methods

In the conventional approach to the synchronous DC-DC solution, much care has to be taken with the timing constraints between the mai n and synchronous switching devices. Not only is this dependent upon individual MOSFET gate threshol ds (whic h vary from device to device within data sheet limits and over temperature), but it is also somewhat dependent upon magnetics, layout and other parasitics. This normally means that significant ‘dead time’ has to be factored in to the design between the main and synchronous devices being turned off and on respectively. Incorrect application of dead time constraints can potentially lead to catastrophic short circuit conditions between V

and GND. For some battery operated

ZXRD1000 SERIES

systems this can not only damage MOSFETs, but also the battery itself. To realise correct ‘dead time’ implementation takes complex circuitry and hence implies additional cost.

The ZETEX Meth od

Zetex has taken a different approach to solving these problems. By looking at the basic architecture of a synchronous converter, a nov el approach usin g the main circuit inductor was developed. By taking the inverse waveform found at the input to the main inductor of a non-synchronous solution, a synchronous drive waveform can be generated that is always relative to the main drive waveform and inverted with a small delay. This waveform can be used to drive the synchronou s switch which means no complex circuitry in the IC need be used to allow for shoot-through protection.

Implementation

Implementation was very easy and low cost. It simply meant peeling off a strand of the main inductor winding and isolating it to form a coupled secondary winding. These are available as standard items referred to in the applications circuits parts list.The use of a small, surface mount, inexpensive ’square loop’ ferrite bead provides an excellent method of eliminating shoot-through due to variation in gate thresholds. The bead essentially acts as a high impedance for the few nano seconds that shoot-through would normally occur. It saturates very quickly as the MOSFETs attain steady state o peration, reducing the bead impedance to virtually zero.

Benefits

The net result is an innovative solution that gives additional benefits whilst lowering overall implementation costs. It is also a technique that can be simply omitted to make a non-synchronous controller, saving further cost, at the expense of a few efficiency points.

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Functional Block Diagram

PIN DESCRIPTIONS ‡ See relevant Applications Section

Pin No. Name Description 1 Bootstrap Bootstrap circuit for generating gate drive 2V

DRIVE

3PWRG 4G 5C 6V 7R 8R 9

ND T INT SENSE+ SENSE-

SHDN Shutdown control. Active low. 10 Dec o up Optional short circuit and overloa d decoupling capaci tor for increased accurac y 11 12 LB

13 V

LBF Low battery flag output. Active low, open collector output

SET

14 Delay External R and C to set the desired cycle time for hiccup circuit. ‡ 15 Comp Compensation pin to allow for stability components and soft start. ‡ 16 V

Output to the gate drive circuit for main N/P channel switches Power ground

Signal ground Timing Capacitor sets oscillator frequency. ‡ Internal Bias Circuit. Decouple with 1µF ceramic capacitor Higher potential input to the current sense for current limit circuit Lower potential input to the current sense for current limit circuit

Low battery flag set. Can be connected to VIN if unused, or threshold set via potential divider. ‡

Input Voltage

Feedback Voltage. This pin has a different function between fixe d and adjustable controller options. The appropriate controller must be used for the fixed or adjustable solution. Connect to V potential divider for adjustable output. ‡

for fixed output, or to

OUT

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Applications

Note: Component names refer to designators shown in the application circuit diagrams.

Output Capacitors

Output capacitors are a critical choice in the overall performance of the solution. T hey are required to filter the output and supply load transi ent curren t. They are also affected by the switching frequency, ripple current, di/dt and magnitude of transient load current. ESR plays a key role in determining the value of capacitor to be used. Combination of both high frequency, low value ceramic capacitors and low ESR bulk storage capacitors optimised for switching applications provide the best response to load transients and ripple requirements. Electrolytic capacitors with low ESR are larger and more expensive so the ultimate choice is always a compromise between size, cost and performance. Care must also be taken to ensure that for large capacitors, the ESL of the leads does not become an issue. Excellent low ESR tantalum or electrolytic capacitors are available from Sanyo OS-CON, AVX, Sprague and Nichicon.

The output capacitor will also affect loop stability, transient performance. The capacitor ESR should preferably be of a similar value to the sense resistor. Parallel devices may be required.

RIPPLE(RMS)

0.29 V

OUT

L f V

(VIN−V

where L= output filter inductance f= switching frequency

For output vol t a ge ripple it is neces s a ry to know the peak ripple current which is given by:

( VIN− V

pk−pk

OUT

L f V

OUT)

Voltage ripple is then:V

= I

−

RIPPLE

∗ ESR

)

OUT

Input Capacitors

The input capacitor is chosen for its RMS current and voltage rating. The use of low ESR electrolytic or tantalum capacitors is recommended. Tantalum capacitors should have their voltage rating at 2V (max), electrolytic at 1.4VIN(max). I

can be

RMS

approximated by:

RMS

= I

OUT

OUT(VIN−VOUT

))

√

Underspecification of this parameter can affect long term reliability. An additonal ceramic capacitor should be used to provide high frequency decoupling at V

IN.

Also note that the input capacitance ESR is effectively in series with the input and hence contributes to efficiency losses related to I

* ESR of the input capacitor.

RMS

MOSFET Selection

The ZXRD1000 family can be configured in circuits where either N or P channel MOSFETs are employed as the main switch. If an N channel device is used, the corresponding N phase controller must be chosen. Similarly, for P channel main switch a P phase controller must be used. The ordering information has a clear identifier to distinguish between N and P phase controllers.

The MOSFET selection is subject to thermal and gate drive considerations. Care also has to be taken to allow for transition losses at high input voltages as well as R

losses for the main MOSFET. It is

DS(ON)

recommended that a device with a drain source breakdown of at least 1.2 times the maximum V should be used.

For optimum efficiency , two N channel low R

DS(on)

devices are required. MOSFETs should be selected with the lowest R

consistent with the output

DS(ON)

current required. As a guide, for 3-4A output, <50mΩ devices would be optimum, provided the devices are low gate threshold and low gate charge. Typically look for devices that will be fully enhanced with 2.7V V

for 4-5A capability. Zetex offers a range of low R

logic level MOSFETs

DS(ON)

which are specifically designed with DC-DC power conversion in mind. Packaging includes SOT23, SOT23-6 and MSOP8 options. Ideal examples of optimum devices would be Zetex ZXM64N03X and ZXM64N02X (N channel). Contact your local Zetex office or Zetex web pag e for further information.

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Applications (continued) Inductor Selection

The inductor is one of the most critical componen ts in the DC-DC circuit.There are numerous types of devi ces available from many suppliers. Zetex has opted to specify off the shelf encapsulated surface mount components, as these represent the best compromi se in terms of cost, size, performance and shielding.

The SimpleSync with an overwinding for the gate drive which is available as a standard part. However, for engineers who wish to design their own custom magnetics, this is a relatively simple and low cost construction technique. It is simply forme d by terminating on e of the multiple strands of litz type wire separ ately. It is still wound on the same core as the main winding and only has to handle enough current to charge the gate of the synchronous MOSFET. The major benefit is circuit simplification and hence lower cost of the co ntrol IC. For non-synchronous operation, the overwinding is not required.

The choice of core type also plays a key role. For optimum performance, a ’swinging choke’ is often preferred. This is one which exhibits an increase in inductance as load current decreases. This has the net effect of reducing circulating current at lighter load improving efficiency. There is normally a cost premium for this added benefit. For this reason the chokes specified are the more usual constant inductance type.

Peak current of the inductor should be rated to minimum 1.2I winding resistance of the main inductor should be less than the main switch output on resistance.

Schottky Diode

Selection depends on whether a synchronous or non-synchronous approach is taken. For the ZXRD1000, the unique approach to the synchronous drive means minimal dead time and hence a small SOT23 1A DC rated device will suffice, such as the ZHCS1000 from Zetex. The device is o nly d esigned to prevent the body diode of the synchronous MOSFET from conducting dur i ng the initial swit c hing transient until the MOSFET takes over. The device should be connected as close as possible to the source terminals of the main MOSFET.

For non-synchron ous applications , t he Schottky diode must be selected to allow for the worst case

technique uses a main inductor

(max) . To maximise efficiency, the

OUT

conditions, when V

is at its highest and V

OUT

is lowest (short circuit conditions for example). Under these conditions the device must handle peak current at close to 100% duty cycle.

Frequency Adjustment

The nominal runnin g frequency of th e controll er is set to 200kHz in the applications shown. This can be adjusted over the range 50kHz to 300kHz by changing the value of capacitor on the C

pin. A low cost

ceramic capacitor can be used. Frequency = 60000/C3 (pF) Frequency v temperature is given in the typical characteristics.

Output Voltage Adjustment

The ZXRD1000 is available as either a fixed 5V, 3.3V or adjustable output. On fixed output versions, the V should be connected to the o utput. Adjustable operation requires a resistive divider connected as fo llows:

The value of the output voltage is determined by the equation

OUT

= VFB (1 +

=1.24V

)

Note: The adjustable circuit is shown in the following transient optimisat ion sect ion. It is also used in t he evaluation PCB. In both t hese circuit s R the label R6 and R

the label R5.

Values of resist or should be between 1k and 20k to guarantee operation. Output voltage can be adjusted in the range 2V to 12V for non-synchronous ap plications. For synchronous applications, the minimum V by the V MOSFET, as the swing in the gate using the SimpleSync

threshold required for the synchronous

technique is approximately V

is assigned

is set

OUT

ISSUE 4 - OCTOBER 2000

Applications (continued)

ZXRD1000 SERIES

Low Battery Flag

The low battery flag threshold can be set by the user to trip at a level determined by the equation:

LBSET

= 1.25

1 +

)

(

RD is recommended to be 10k where RC and RD are connected as follows:

Hysteresis is typically 20mV at the LB

SET

pin.

Current Limit

A current limit is set by the low value resistor in the output path, R overload current limit, it does not need to be accurate and can hence be a low cost device.

The value of the current limit is set by using the equation:

LIM

(A) =

A graph of Current Limit v R typical characteristics. This should assist in the selection of R

If desired, R When used on the input side R

with the upper output device (i.e. in series with the drain or source in N and P channel solutions respectively).Typically in this configuration R be 20m⍀.

. Since the resistor is only used for

SENSE

50(mV)

(mΩ)

SENSE

is shown in the

SENSE

appropriate to application.

SENSE

can also be on the input supply side.

SENSE

should be in series

SENSE

will

Hiccup Time Constant

The hiccup circuit (at the ’delay’ pin) provides overload protection for the soluti on. The threshold of the hiccup mode is determined by the value of R

SENSE,

When >50mV is developed across the sense resistor, the hiccup circuit is triggered, inhibiting the device.

It will stay in this state depending upon the time constant of the resistor and capacitor connected at the ’delay’ pin. In order to keep the dissipation down under overload conditions it is recommended the circuit be off for approximately 100ms. If for other application reasons this is too long an off period, this can be reduced at least by 10:1, care needs to be taken that any increased dissipation in the external MOSFET is still acceptable. The resistor capacitor combination R1,C1 recommended in the applications circuits provides a delay of 100ms.

Soft Start & Loop Stability

Soft start is determined by the time constant of the capacitor and resistor C7 and R3. Typically a good starting point is C7 = 22µF and R3 = 24k for fixed voltage variants. For fully adjustable variants see Optimising for Transient Response later in the applicati ons sec ti on . This net wor k al so he lps prov i de good loop stability.

Low Quiescent Shutdown

Shutdown control is provided via the SHDN pin, putting the device in to a low quiescent sleep mode. In some circumstances where rapid sequencing of V can occur (when VCC is turned off and back on) and V has a very rapid rise time (100-200ms) timing conflicts can occur.

CC CC

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Optimising for Transient Response.

Transient response is important in applications where the load current increases and decreases rapidly. To optimise the system for good transient response certain criteria have to be observed.

The optimum solution using t he ZXRD seri es uses the adjustable N phase controller in synchrono us mode as represented in the diagram opposite. The external networks for this solution require the use of the adjustable controller option.

By using standar d ’bulk’ capacitors in parallel w ith a single OS-CON capacitor significant performance versus cost advantage can be given in this application. The low ESR of the OS-CON capacitor provides competitive output voltage ripple at low capacitance values. The ’bulk’ capacitors aid transient response. However, the low ESR of the OS-CON capacitor can cause instability within the system. To maintain stability an RC network (R implemented. Furthermore, a capacitor in parallel with R6 (C

2) is required to optimise transient respo nse. To

do this the appropriate adjustabl e ZXRD must be used because the input to the internal error amplifier (pin

16) has to be accessed. The adjustable device differs from fixed controller versions in this respect. This combined with a frequency compensation ad justment gives an optimised solution for excellent transient response.

, Cx1) has to be

Layout Issues

Layout is critical for the circui t to fu ncti on in the most efficient manner in terms of electrical efficiency, thermal considerations and noise. The following guidelines should be observed:

A 2.2µF (C8) decoupling capacitor should be as close as possible to the drive MOSFETs and D1 anode. This capacitor is effectively connected across V but should be as close as possible to the appropriate components in either N or P, synchronous or non-synchronous configurations. Furthermore the G

connection o f the sync hronou s MOSFET /D1 a nd

output capacitors should be close together and use either a ground plane or at the very least a low inductance PCB track.

For the standard application circuits, a G erber file can be made available for the layout which uses the materials as listed in the bill of materials table for the reference designs.

and G

Reference Designs.

In the following section reference circuit s are show n for the ZXRD series in both synchronous and non-synchronous modes. These are shown for each of the N and P phase controllers. In each case efficiency graphs are shown for the appropriate configuration using 3.3V and 5V ZXRD devices. The BOM is then shown for the design. Additional and alternative components are shown with a ’*’. These refer to modifications to the design to optimise for transient response. Optimisation is reached using th e adjustable version of either N or P ph ase controller device.

ISSUE 4 - OCTOBER 2000

BAT54

OUT

15µH

ZXM64N02X

3.3V 4A

SENSE

C11

1µF

0.01R

Cx2

10k

0.01µF

ZXRD1000 SERIES

1µF

OUT

120µF

680µF

2.2µF

ZHCS1000

ZXM64N02X

BAT54

converter 200kHz.

4.5-10V

ISSUE 4 - OCTOBER 2000

10k

1µF

SENSE -

Delay

Comp

INT

Decoup

CX1

2k7

0.022µF

680R

GNDPWR

1µF

330pF C2

68µF

22µF

C3 1µF

1µF

Op timised Transient Response, 4.5V-10V Input, 3V/4A Output, N Phase Adjustable, SimpleSync

1µF

C10

DRIVE

IC1

SHDN

100k

Shut Down

Bootstrap

SET

1µF

SENSE+

LBF

Low input flag

ZXRD1000 SERIES

4.5V -10VInput, 3.3V/4A Output, N Phase, High Efficiency SimpleSyncTM Converter 200kHz

4.5-10V

Shut Down

Low input flag

C11

SENSE

OUT

3.3V 4A

OUT

SHDN

SET

LBF

Delay Decoup V

INT

GNDG

DRIVE

Bootstrap

SENSE+

SENSE -

Comp

PWR

C10

8 16

F B

IC1

14 10

6 5

C3C2

ZXRD1033NQ16

100

95 90 85 80 75 70 65

Efficiency (%)

60 55 50

0.1 1

I (A)

OUT

V =7V

V =10V

Efficiency v I

V =5.0V.

OUT

ZXRD1050NQ16

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1033NQ16 Zetex QSOP16 Controller IC N1

>7V

<7V

N2 D1 1A 0. 5V V

D2 10mA 0 .4V V D3 10mA 0 .4V V

ZXM64N03X ZXM64N02X ZXM64N02X

ZHCS1000 Zetex SOT23 Schottky Diode 1A BAT54 Zetex SOT23 Schottky Diode

BAT54 Zetex SOT23 Schottky Diode

Zetex MSOP8 Low R

N MOSFET 30V V 20V V

R1 100k WCR0805-100k Welwyn/IRC 0805 Size R2 680⍀ WCR0805-680 Welwyn/IRC 0805 Size R3 24k WCR0805-24k Welwyn/IRC 0805 Size *R3 3k WCR0805-3k Welwyn/IRC 0805 Size R4 10k WCR0805-10k Welwyn/IRC 0805 Size *Rx 2.7K WCR0805-2.7k Welwyn/IRC 0805 Size R

SENSE

OR OR

OUT

OR OR

OUT

C1 1␮FGeneric C2 1␮FGeneric

0.01⍀ LR1206R010 Welwyn/IRC Current Limit Sense Resistor 68␮F

68␮F 68␮F

470␮F *150␮F *120␮F

TPSD68M016R0150 20SA68M 20SV68M

TPSE477M010R0200 6SA150M 6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 16V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

680␮F x 2 6CV680GX Sanyo 680␮F 6V SMT Bulk Capacitor

1µF,10V. X7R Diel ectric

1µF,4V.X 7R Dielec tric C3 330pF Generic 330pF,4V.X7R Dielectric C4 1␮FGeneric C5 1␮FGeneric C6 1␮FGeneric C7 22␮FGeneric C8 2.2␮FGeneric C9 1␮FGeneric C10 1␮ FGeneric C11 1␮ FGeneric *Cx1 0.022␮FGeneric

1µF,10V. X7R Diel ectric

1µF,4V.X 7R Dielec tric

22µF,4V.X7R Dielectric

2.2µF,10V.X7R Dielectric

1µF,10V. X7R Diel ectric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,10V.X7R Dielectric L1

15␮H 10␮H

CDRH127B-OWZ9 6001

Sumida SMT C&D Technologies

Low Profile SMT Low Profile SMT

(NCL)

Fx 2785044447 FairRite SMT Ferrite Bead

* see Optimising for Transient Response Section

DS(ON)

20V V

DS DS DS

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

4.5V -10VInput, 3.3V/4A Output, N Phase, High Efficiency Non-Synchronous Step Down Converter 200kHz

4.5-10.0V

IC1

Shut Down

Low input flag

6 5

SHDN

SET

LBF

Delay Decoup V

INT

Bootstrap

GNDG

PWR

SENSE+

SENSE -

Comp

C10

DRIVE

F B

C11

14 10

C3C2

100

V =5V

V =10V

80 75

Efficiency (%)

70 65 60

Efficiency v I

55 50

0.1 1 10

I (A)

OUT

100

V =7V

95 90 85

V =10V

Efficiency (%)

75 70 65 60

Efficiency v I

55 50

0.1 1 10

I(A)

OUT

V =3.3V.

OUT

V=5V.

OUT

SENSE

OUT

ZXRD1033NQ16

ZXRD1050NQ16

3.3V 4A

OUT

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1033NQ16 Zetex QSOP16 Controller IC N1

>7V

<7V

D1 5A 0. 5V V

D2 10mA 0 .4V V D3 10mA 0 .4V V

ZXM64N03X ZXM64N02X

50WQ04FN Zetex Schottky Diode 5A BAT54 Zetex SOT23 Schottky Diode

BAT54 Zetex SOT23 Schottky Diode

Zetex MSOP8 Low R

N MOSFET 30V V 20V V

SENSE

OR OR

OUT

OR OR

OUT

C1 1␮FGeneric C2 1␮FGeneric

0.01⍀ LR1206R010 Welwyn/IRC Current Limit Sense Resistor 68␮F

68␮F 68␮F

470␮F *150␮F *120␮F

TPSC68M02R0150 20SA68M 20SV68M

TPSE477M010R0200 6SA150M 6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 25V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

680␮F x 2 6CV680GX Sanyo 680␮F 6V SMT Bulk Capacitor

1µF,10V. X7R Diel ectric

1µF,4V.X 7R Dielec tric

22µF,4V.X7R Dielectric

2.2µF,10V.X7R Dielectric

1µF,10V. X7R Diel ectric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,10V.X7R Dielectric L1

15␮H 15␮H

CDRH127-150MC DP5022P-153

Sumida Coilcraft

Low Profile SMT Low Profile SMT

* see Optimising for Transient Response Section

DS(ON)

DS DS

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

5V -18V Input, 5V/3A Output, P Phase, High Efficiency SimpleSync

5V-18V

IC1

Shut Down

Low input flag

14 10

6 5

C3C2

100

95 90 85 80 75

Efficiency (%)

70 65 60 55 50

0.1 1

100

95 90 85 80

Efficiency (%)

75 70 65 60 55 50

0.1 1 10

SHDN

SET

LBF

Delay Decoup V

INT

GNDG

DRIVE

Bootstrap

SENSE+

SENSE -

Comp

PWR

8 16

F B

V =5V

V =12V

Efficiency v I

I (A)

OUT

V =7V

V =12V

Efficiency v I

I(A)

OUT

N1 C8

OUT

V =3.3V.

OUT

V=5V.

OUT

Converter 200kHz

SENSE

ZXRD1033PQ16

ZXRD1050PQ16

OUT

5.0V 3A

OUT

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1050PQ16 Zetex QSOP16 Controller IC P1

V V

IN IN

>12V <12V

ZXM64P03X ZXM64P02X

Zetex MSOP8 Low R

P MOSFET 3 0V V

20V VDS N1 ZXM64 NO3 X Zetex MSOP8 Low R D1 1A 0. 5V V

ZHCS1000 Zetex Schottky Diode 1A R1 100k WCR0805-100k Welwyn/IRC 0805 Size R2 680⍀ WCR0805-680 Welwyn/IRC 0805 Size R3 24k WCR0805-24k Welwyn/IRC 0805 Size *R3 3k WCR0805-3k Welwyn/IRC 0805 Size *Rx 2.7K WCR0805-2.7k Welwyn/IRC 0805 Size R

SENSE

OR OR

OUT

OR OR

OUT

C1 1␮FGeneric C2 1␮FGeneric

0.015⍀ LR1206R015 Welwyn/IRC Current Limit Sense Resistor 68␮F

68␮F 68␮F

470␮F *150␮F *120␮F

TPSV686M025R0150

20SA68M

20SV68M

TPSE477M010R0200

6SA150M

6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 25V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

680␮F x 2 6CV680GX Sanyo 680␮F 6V SMT Bulk Capacitor

1µF,20V. X7R Diel ectric

1µF,4V.X 7R Dielec tric C3 330pF Generic 330pF,4V.X7R Dielectric C4 1␮FGeneric C5 1␮FGeneric C6 1␮FGeneric C7 22␮FGeneric C8 2.2␮FGeneric C9 1␮FGeneric *Cx1 0.022␮FGeneric

1µF,20V. X7R Diel ectric

1µF,4V.X 7R Dielec tric

22µF,4V.X7R Dielectric

2.2µF,20V.X7R Dielectric

1µF,20V. X7R Diel ectric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,20V.X7R Dielectric L1

15␮H 10␮H

CDRH127B-OWZ9 6001

Sumida C&D Technologies

Low Profile SMT Low Profile SMT

(NCL)

Fx 2785044447 FairRite SMT Ferrite Bead

* see Optimising for Transient Response Section

DS(ON)

MOSFET

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

5V -18V Input, 5V/3A Output, P Phase, High Efficiency Non-synchronous Step Down Converter 200kHz

5.0-18V

Shut Down

Low input flag

IC1

SHDN

SET

LBF

Delay Decoup V

INT

GNDG

DRIVE

Bootstrap

SENSE+

SENSE -

Comp

PWR

F B

14 10

6 5

C3C2

SENSE

OUT

5.0V 3A

OUT

100

95 90 85

V =5V

V =12V

80 75

Efficiency (%)

70 65 60 55 50

0.1 1 10

100

I (A)

OUT

95 90 85

Efficiency v I

V =3.3V.

V =7V

V =12V

OUT

ZXRD1033PQ16

Efficiency (%)

75 70 65 60 55 50

0.1 1 10

I (A)

OUT

Efficiency v I

V =5V.

OUT

ZXRD1050PQ16

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1050PQ16 Zetex QSOP16 Controller IC P1

>12V

<12V

D1 5A 0. 5V V

ZXM64P03X ZXM64P02X

50WQ04FN IR Schottky Diode 5A R1 100k WCR0805-100k Welwyn/IRC 0805 Size R2 680⍀ WCR0805-680 Welwyn/IRC 0805 Size R3 24k WCR0805-24k Welwyn/IRC 0805 Size *R3 3k WCR0805-3k Welwyn/IRC 0805 Size *Rx 2.7k WCR0805-2.7k Welwyn/IRC 0805 Size R

SENSE

OR OR

OUT

OR OR

OUT

0.015⍀ LR1206R015 Welwyn/IRC Current Limit Sense Resistor 68␮F

68␮F 68␮F

470␮F *150␮F *120␮F

TPSV686M025R0150

20SA68M

20SV68M

TPSE477M010R0200

6SA150M

6SV120M

680␮F x 2 6CV680GX Sanyo 680␮F 6V SMT Bulk Capacitor C1 1␮FGeneric C2 1␮FGeneric C3 330pF Generic 330pF,4V.X7R Dielectric C4 1␮FGeneric C5 1␮FGeneric C6 1␮FGeneric C7 22␮FGeneric C8 2.2␮FGeneric C9 1␮FGeneric *Cx1 0.022␮FGeneric *Cx2 10nF Generic 10nF,20V.X7R Dielectric L1 15␮H

15␮H

CDRH127-150MC D05022P-153

* see Optimising for Transient Response Section

Zetex MSOP8 Low R

P MOSFET 3 0V V 20V VDS

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 25V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

1µF,20V. X7R Diel ectric 1µF,4V.X 7R Dielec tric

1µF,20V. X7R Diel ectric 1µF,20V. X7R Diel ectric 1µF,4V.X 7R Dielec tric 22µF,4V.X7R Dielectric

2.2µF,20V.X7R Dielectric 1µF,20V. X7R Diel ectric

0.022µF,4V.X7R Dielectric

Sumida SMT Coilcraft

Low Profile SMT Low Profile SMT

DS(ON)

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Designing with the ZXRD and Dynamic Performance

This section refers to the reference design for the 3.3V, 4A output N channel synchronous converter. This is as shown previously in the Optimising for transient response section of the applications i nformation (page

10). This circuit is also representative of the ZXRD evaluation board (see ordering information).

The ZXRD series has been designed to give the best in terms of all round flexibility allowing engineers to either use the reference design as is, or to tailor the design to the individual requirements. This section demonstrates the performance features of the ZXRD series and its associated components.

Efficiency

Efficiency is often quoted as one of the key parameters of a DC-DC converter. Not only does it give an instantaneous idea of heat dissipation, but also an idea as to the extent battery life can be extended in say portable applications. Fig.1 shows th e efficiency of the standard application circuit. Efficiency vs Output current is shown for the 5 to 3.3V configuration.

100

95 90 85 80

Efficiency (%)

75 70 65 60 55 50

0.1 1 10

Startup

Startup is always important in DC-DC converter applications. Magnetics have large inrush current requirements. For higher current applications using large input and output capacitors the startup current can be quite significant. This can cau se several problems.

In many applications the power supply to the DC-DC converter can be affected. Particularly in battery powered applications, trying to take large steps in load current out of the supply can result in either current limitation (by the internal impedance of the battery), or it can actually damage the battery.

For the converter itself, large changes in load current can result in false triggering of the RSENSE circuit. This could result in device hiccup (see applications section).

The ZXRD programmable soft start function eliminates both these problems. This is very clear to see in operation if the main switching waveforms are examined.

The soft start is programmed by the combination of resistor and capacitor R3 and C7. As a recommendation, R3 and C7 are set to 3k and 22µF respectively, which limits the peak startup current appropriately in the reference circuit. Fig.2 shows the startup waveforms. V are plotted against time

V =5V

I (A)

OUT

Efficiency v I

V =3.3V.

OUT

and V

OUT

Fig.1. 5-3.3V Efficiency to 4A

ISSUE 4 - OCTOBER 2000

Fig.2. Startup Waveform for 3.3V output .

SimpleSyncTM and Shoot-Through

Steady state operation under constant load gives an excellent indication of the ZXRD series performance and also demonstrates how well SimpleSync technique dr ives the synch ronous MOSFET gate using the overwinding on the main inductor. It also uses the high speed suppression characteristics of the ferrite bead to prevent shoot through currents. Fig.3 shows the gate waveforms for the main and synchronous MOSFET devices (Zetex ZXM64N02X).

works. The SimpleSync

ZXRD1000 SERIES

Output Voltage Ripple

Output voltage ripple is shown in Fig.4 and Fig. 5 for load currents of 0.5A and 4A respectively. Output voltage ripple will be depen dant, to a very large extent, on the output capacitor ESR. (see Applications Se c t io n f or ripple calculation).

Fig.4 0.5A Main & V

Waveforms

OUT

Fig3. Main & Synchronous gate waveforms

ISSUE 4 - OCTOBER 2000

Fig.5 4A Main & V

Waveforms

OUT

ZXRD1000 SERIES

Line regulation

Variation in input voltage for both these conditions (0.5A and 4A output) shows the excellent line regulation the ZXRD. Fig.6 shows that with 0.5A and 4A output currents, applying an increase in input voltage from 5V to 10V , results in only small ch anges in output regulation.

Fig.6a Line Regulation 0.5A load

Fig.6b Line Regulation 4A load

Transient Response

Transient response to changes in load is becoming an increasingly critical feature of many converter circuits. Many high speed processors make very large step changes in their load requirements, at the same time as having more stringent specifications in terms of overshoot and undershoot. Fig.7 demonstrates the excellent load transient performance of the ZXRD series. A step change using an electronic load from 1A to 3A is sho wn wit h corre spondin g output t ransie nt performance.

Fig.7 Output Transient Response

Non-synchronous Applications

One of the key features of the ZXRD series, when combined with the SimpleSync flexibility in allowing engineers to choose either a synchronous or non-synchronous architecture.

Making the design non-synchronous by removing MOSFET N2 (the synchronous device), replacing the ZHCS1000 with a high current diode (50WQ04FN) and using a 2 terminal inductor, such as the Sumida CDRH127-150MC, decreases cost slightly at the expense of a few efficiency points. Fig.8 shows the effect on the efficiency of the 5 to 3.3V 4A application when the design is made non-s y n c hronous.

technique , i s t he

ISSUE 4 - OCTOBER 2000

100

95 90 85 80 75

Efficiency (%)

70 65 60 55 50

0.1 1 10

Fig.8 Efficiency for non-synchronous 5-3.3V conversion

Using ’P’ Channel Devices (No Boot strap)

All the preceeding examples utilise N channel MOSFET devices and a boots trap circuit to provi de full enhancement to the high side device. These circuits have a maximum input voltage of 10V. For applications requiring a higher input voltage, using P channel devices for the main MOS FET will allow u p to 18V operation. Typically this may be in a 12V to 5V converter circuit.

ZXRD1000 SERIES

V =5V

Efficiency v I

V =3.3V.

OUT

I(A)

OUT

If the same package size MOSFET devices are used, it is likely a higher on resistance will be encountered, with the result that efficiency will decline slightly. Fig 9 shows the efficiency plot for a P phase synchronous 5V converter based on the ZXRD1050PQ16. The figure charts efficiency v output current at 12V input and 7V input.

OUT

100

95 90 85 80

Efficiency (%)

75 70 65 60 55 50

0.1 1 10

Fig.9 ’P’ Channel Device Efficiency (synchronous)

ISSUE 4 - OCTOBER 2000

I (A)

OUT

V =7V

V =12V

Efficiency v I

V =5V.

OUT

ZXRD1000 SERIES

ZXCM6 Series

Low voltage MOSFETs

Unique structure gives optimum performance for switching applications.

N channel devices offer high efficiency performance for switching applications.

This family of MOSFETs from Zetex offers a combination of low on-resistance and low gate charge, providing optimum performance and high efficiency for switching applications such as DC - DC conversion.

On resistance is low across the family, from only 40mΩ (max) for the ZXM64N02X part up to 180mΩ (max) for the ZXM61N02F. This means that on-state losses are minimised, impro ving efficiency in low fr equency drive applications. Threshold voltages of 0.7V and 1V minimum allow the MOSFETs to be driven from low voltage sources.

To minimise switching losses, and hence increase the efficiency of high frequency operation, gate charge (Qg ) is small. The maximum Qg varies from 3.4nC to 16nC depending on which device is chosen. C capacitance) is also low, e.g. typically 30pF for the ZXM6203E6 device. This results in better efficiency in high frequency applications.

rss

(Miller

P channel MOSFETs excel in load switching applications.

The P-channel MOSFETs offer highly efficient performance for low voltage load switching applications. This helps increase battery life in portable equipment.

Minimum threshold voltage is low, only 0.7V or 1V, enabling the MOSFETs to provide optimum performance from a low voltage so urce. To en sure th e device suitability for low voltage applications, drain to source voltage is specified at 20V or 30V.

To minimise on-sta te loss es, and im prove effici ency in in low frequency drive applications, the on-resistance (R

) is low across the range. For example, the

DS(ON)

ZXM64P03X has an R source voltage of 4.5V.

Gate source charge is also low, easing requirem ents for the gate driver. Maximum values range from 0.62nC for the ZXM61P03F, up to 9nC for the ZXM64P03X.

of only 100mΩ at a gate to

DS(ON)

Small outline surface mount packaging

The products have been designed to optimise the performance of a range of packages. The parts are offered in SOT23, SOT23-6 and MSOP8 packages. The MSOP8 enables single or dual devices to be offered. The MSOP8 is also half the size of competitive SO8 devices and 20% smaller than TSSOP8 alternatives.

Product performance

The following performance characteristics show the capabilities of the ZXM64N02X. This device is recommended f or use with certain config urations of the ZXRD DCDC controller circuit.

ISSUE 4 - OCTOBER 2000

Performance Characterisation of ZXM64N02X

ZXRD1000 SERIES

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current I Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance (1)

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

DS(on)

20 V

1 100 nA

0.7 V

0.040

0.050

µA

Ω Ω

=250µA, VGS=0V

VDS=20V, VGS=0V V

=± 12V,

=0V

=250µA, VDS=

VGS=4.5V, ID=3.8A

=2.7V, ID=1.9A

6.1 S VDS=10V,ID=1.9A

DYNAMIC (3)

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

iss

oss

rss

1100 pF 350 pF 100 pF

=15 V,

=0V, f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Total Gate Charge Q Gate-Source Charge Q Gate Drain Charge Q

d(on)

d(off)

5.7 ns

9.6 ns

28.3 ns

11.6 ns 16 nC

3.5 nC

5.4 nC

=10V, ID=3.8A

=6.2Ω, RD=2.6Ω

(Refer to test circuit)

=16V,VGS=4.5V

=3.8A

, I

(Refer to test circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Re cove ry Ti me (3) t Reverse Re cove ry Cha rge( 3) Q

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

ISSUE 4 - OCTOBER 2000

23.7 ns Tj=25°C, IF=3.8A,

13.3 nC

0.95 V Tj=25°C, IS=3.8A,

=0V

di/dt= 100A/µs

ZXRD1000 SERIES

208221 b8066

GERMANY ASIA USA UK

Zetex

Sumida

FairRite

AVX

Welwyn, IR C

Coilcraft

Sanyo Electron ic Comp. (OS-CON)

C & D Technologies (NCL)

Zetex GmbH Munich

(49) 894549490 (852) 2610 0611 (1) 631 543 7100 (44) 161 622 4444 http://www.zetex.com

http://www.japanlink.com/sumida/ Schaffner

Electronik GmbH (49) 72156910

http://www.avxcorp.com Welwyn

Electronics GmbH (49)871 97376 0

http://welwyn-tt.co.uk

http://www.coilcraft.com Sanyo Europe

Munich (49) 89 457693 16

http://www.sanyovideo.com Contact

C & D Technologies (NCL) UK

Zetex Asia Hong Kong

Sumida Electric HK (852) 2880 6688

Taiwan Sumida Electric (886) 2762 2177

Fair Rite Asia Pte Ltd Singapore (65) 281 1969 Japan/Korea (81) 33225505 5

AVX Asia Singapore (65) 258 2833

TTC Group plc Singapore (65) 536 51667

SANYO Electronics Ltd. Hong Kong (852) 21936888 Singapore (65) 281 3226 Japan (81) 720 70 630 6

C & D Technologies Guangzhou, Guangdong, PRC (86) 208221 80 66

Zetex Inc Long Island NY

Sumida Electric USA (CHICAGO Head Office)

(1) 847 956-0666 (44) 1525 290755

FairRite Products Corp (1) 914 895 2055

AVX USA (1) 843 448 9411

IRC Inc (1) 512 992 7900

Coilcraft Inc (1) 847 639 6400

SANYO Electronics Ltd. Forrest City, AR 870 633 5030 San Diego, CA 619 661 6835 Rochelle Pk, NJ 201 843 8100

C & D Technologies (NCL) 5816 Creedmoor Road, Raleigh North Carolina 27612 (1) 919 571 9405

Zetex PLC Chadderton, Oldham

Ole Wolf Electronics Ltd.

Schaffner EMC Ltd (44) 118 977 0070

AVX UK (44) 1252 770000

Welwyn Components Ltd (44) 1670 822181

Coilcraft Europe (44) 1236 730595

Semicon UK Ltd (44) 1279 422224

C & D Technologies (NCL) Tanners Drive Blakelands North Milton Keynes MK14 5BU (44) 1908 615232

http://www.dc-dc.com

ISSUE 4 - OCTOBER 2000

Connection Diagram

ZXRD1000 SERIES

Bootstrap

DRIVE

PWRG G

INT

SENSE +

SENSE -

Package Dimensions

IDENTIFICA TION RECESS FOR PIN 1

Comp Delay V

LBF

Note: Connection diagram is the same for N and P Phase, adjustable and

fixed controllers. The V

pin has a different function between

adjustable and fixed versions.

SET

Decoup

SHDN

PIN No.1

DIM Millimetres Inches

MIN MAX MIN MAX A 4.80 4.98 0.189 0.196 B 0.635 0.025 NOM C 0.177 0.267 0.007 0.011 D 0.20 0.30 0.008 0.012 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.053 0.069 G 0.10 0.25 0.004 0.01 J 5.79 6.20 0.228 0.244 K0° 8° 0° 8°

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Ordering Information

Device Description T&R Suffix Partmarking

ZXRD1033NQ16 3.3 V Fixed controller N main switch TA , TC ZXRD1033 N ZXRD1050NQ16 5.0 V Fixed controller N main switch TA , TC ZXRD1050 N ZXRD100ANQ16 Adjustable controller N main switch TA, TC ZXRD100AN ZXRD1033PQ16 3.3V Fixed controller P main switch TA, TC ZXRD1033P ZXRD1050PQ16 5.0V Fixed controller P main switch TA, TC ZXRD1050P ZXRD100APQ16 Adjustable controller P main switch TA, TC ZXRD100AP

’N main switch’ indicates controller for use with N channel main switch element. ’P main switch’ indicates controller for use with P channel main switch element.

TA= Tape and Reel quantity of 500 TC= Tape and Reel quantity of 2500

Demonstration Boards

These can be requested through your local Zetex office or representative. These bo ard s can be tailored to your specific needs. If you would like to obtain a demo board then a request form is available to hel p determine your exact requirement.

Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 4 7 Mall Drive, Unit 4 3701-04 Metroplaza, Tower 1 agents and distributors in D-81673 Münc hen Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kon g Zetex plc 2001 Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be re garded as a represen ta tio n re l at ing to th e pr od uct s or serv ices con cer ne d . The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 4 - OCTOBER 2000

Datasheet ZXRD1000 Datasheet (ZETEX)

Specifications and Main Features

Frequently Asked Questions

User Manual