Zetex ZXMN2A02X8TA, ZXMN2A02X8TC Datasheet
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
=20V; R
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
DS(ON)
=0.02⍀D=7.6A
ZXMN2A02X8
MSOP8
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXMN2A02X8TA 7” 12mm 1000 units
ZXMN2A02X8TC 13” 12mm 4000 units
DEVICE MARKING
•
ZXMN
2A02
PROVISIONAL ISSUE A - SEPTEMBER 2001
PER REEL
1
Top View
ZXMN2A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V
=10V; TA=25°C (b)
GS
V
=10V; TA=70°C (b)
GS
V
=10V; TA=25°C (a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
20 V
12 V
7.6
6.1
6
27 A
3.1 A
27 A
1.1
8.8
mW/°C
1.8
14.4
mW/°C
-55 to +150 °C
113 °C/W
70 °C/W
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
PROVISIONAL ISSUE A - SEPTEMBER 2001
2
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