20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
=20V; R
=0.12⍀D=2.09A
DS(ON)
ZXMN2A01F
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
• DC - DC Converters
•
Power Management Functions
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXMN2A01FTA 7” 8mm 3000 units
ZXMN2A01FTC 13” 8mm 10000 units
DEVICE MARKING
•
7N2
PER REEL
SOT23
Top View
PROVISIONAL ISSUE B - JUNE 2001
1
ZXMN2A01F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V
=4.5V; TA=25°C(b)
GS
V
=4.5V; TA=70°C(b)
GS
V
=4.5V; TA=25°C(a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
20 V
12
2.09
1.67
1.84
10 A
1.05 A
10 A
625
5
806
6.4
mW
mW/°C
mW
mW/°C
-55 to +150 °C
200 °C/W
155 °C/W
V
A
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE B - JUNE 2001
2