Zetex ZXMN2A01E6TA, ZXMN2A01E6TC Datasheet

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V

(BR)DSS

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structurethatcombinesthebenefitsoflowon-resistancewithfastswitching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

•

•

•

•

•

APPLICATIONS

• DC - DC Converters

=20V; R

Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package

DS(ON)

=0.12⍀D=3.03A

ZXMN2A01E6

SOT23-6

•

Power Management Functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZXMN2A01E6TA 7” 8mm 3000 units
ZXMN2A01E6TC 13” 8mm 10000 units

DEVICE MARKING

•

2A1

PROVISIONAL ISSUE B - JUNE 2001

PER REEL

Top View

1

ZXMN2A01E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V

=4.5V; TA=25°C(b)

GS

V

=4.5V; TA=70°C(b)

GS

V

=4.5V; TA=25°C(a)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R

θJA

θJA

20 V

12

3.03

2.43

2.44
10 A

1.8 A
10 A

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

113 °C/W

73 °C/W

V
A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.

PROVISIONAL ISSUE B - JUNE 2001

2