ZETEX ZXMN2A01E6 Technical data
查询ZXMN2A01E6供应商
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structurethatcombinesthebenefitsoflowon-resistancewithfastswitching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
=20V; R
Low on-resistance
DS(ON)
ZXMN2A01E6
=0.12⍀D=3.03A
SOT23-6
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
•
APPLICATIONS
• DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXMN2A01E6TA 7” 8mm 3000 units
ZXMN2A01E6TC 13” 8mm 10000 units
DEVICE MARKING
•
2A1
PER REEL
Top View
PROVISIONAL ISSUE B - JUNE 2001
1
ZXMN2A01E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V
=4.5V; TA=25°C(b)
GS
V
=4.5V; TA=70°C(b)
GS
V
=4.5V; TA=25°C(a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
20 V
12
3.03
2.43
2.44
10 A
1.8 A
10 A
1.1
8.8
mW/°C
1.7
13.6
mW/°C
-55 to +150 °C
113 °C/W
73 °C/W
V
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE B - JUNE 2001
2
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