ZETEX ZXMN10B08E6 Technical data

100V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN10B08E6

SUMMARY
V

(BR)DSS

= 100V; R

DS(ON)

= 0.230 ID= 1.9A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23-6 package

•

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

-

6

3

2

T

O

S

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN10B08E6TA 7” 8mm 3000 units

ZXMN10B08E6TC 13” 8mm 10000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

10B8

PROVISIONAL ISSUE B - MAY 2003

PINOUT

Top View

1

SEMICONDUCTORS

ZXMN10B08E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate Source Voltage V

Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)

Pulsed Drain Current (c) I

Continuous Source Current (Body Diode) (b) I

Pulsed Source Current (Body Diode) (c) I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range Tj:T

I

D

DM

S

SM

P

P

DSS

GS

D

D

stg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

R

R

θJA
θJA

100 V

20 V

1.9

1.5

1.6

9A

2.5 A

9A

1.1

8.8

1.7

13.6

-55 to +150 °C

113 °C/W

73 °C/W

mW/°C

mW/°C

A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph

PROVISIONAL ISSUE B - MAY 2003

SEMICONDUCTORS

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CHARACTERISTICS

ZXMN10B08E6

PROVISIONAL ISSUE B - MAY 2003

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SEMICONDUCTORS

ZXMN10B08E6

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (1)(3) g
DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C
SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Charge Q

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.

= 25°C unless otherwise stated).

A

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

SD

rr

rr

100 V ID=250␮A, VGS=0V

0.5 ␮AVDS=100V, VGS=0V

100 nA VGS=⫾20V, VDS=0V

1.0 3.0 V ID=250␮A, VDS=V

0.230

0.300

0.500

4.8 S VDS=15V,ID=1.6A

497 pF

29 pF

18 pF

2.9 ns

2.1 ns

12.1 ns

5.0 ns

5.0 nC VDS=50V,VGS=5V,

9.2 nC

1.7 nC

2.5 nC

0.85 0.95 V TJ=25°C, IS=2.0A,

32.0 ns TJ=25°C, IF=1.7A,

40.0 nC

⍀
⍀

VGS=10V, ID=1.6A
VGS=4.5V, ID=1.4A
VGS=4.3V, ID=1.1A

VDS=50V,VGS=0V,
f=1MHz

VDD=50V, ID=1.0A
R

≅6.0⍀,V

G

=1.6A

I

D

VDS=50V,VGS=10V,

=1.6A

I

D

VGS=0V

di/dt= 100A/␮s

(3) For design aid only, not subject to production testing.

GS

GS

=10V

SEMICONDUCTORS

PROVISIONAL ISSUE B - MAY 2003

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TYPICAL CHARACTERISTICS

ZXMN10B08E6

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SEMICONDUCTORS

ZXMN10B08E6

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

PROVISIONAL ISSUE B - MAY 2003

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ZXMN10B08E6

PACKAGE OUTLINE PAD LAYOUT DETAILS

e

b

2

L

E1

DATUM A

C

AA2

E

e1

D

a

A1

CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.

PACKAGE DIMENSIONS

DIM

Millimetres Inches

Min Max Min Max Min Max Min Max

DIM

A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118

A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069

A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.002

b 0.35 0.50 0.014 0.019 e 0.95 REF 0.037 REF

C 0.09 0.20 0.0035 0.008 e1 1.90 REF 0.074 REF

D 2.80 3.00 0.110 0.118 L 0° 10° 0° 10°

Millimetres Inches

© Zetex plc 2003

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PROVISIONAL ISSUE B - MAY 2003

7

SEMICONDUCTORS