ZETEX ZXMN10B08E6 Technical data
100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10B08E6
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.230 ID= 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
•
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
-
6
3
2
T
O
S
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN10B08E6TA 7” 8mm 3000 units
ZXMN10B08E6TC 13” 8mm 10000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
10B8
PROVISIONAL ISSUE B - MAY 2003
PINOUT
Top View
1
SEMICONDUCTORS
ZXMN10B08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range Tj:T
I
D
DM
S
SM
P
P
DSS
GS
D
D
stg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R
R
θJA
θJA
100 V
20 V
1.9
1.5
1.6
9A
2.5 A
9A
1.1
8.8
1.7
13.6
-55 to +150 °C
113 °C/W
73 °C/W
mW/°C
mW/°C
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
PROVISIONAL ISSUE B - MAY 2003
SEMICONDUCTORS
2
CHARACTERISTICS
ZXMN10B08E6
PROVISIONAL ISSUE B - MAY 2003
3
SEMICONDUCTORS
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