Zetex ZXMN10A11GFTA, ZXMN10A11GFTC Datasheet
100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A11G
SUMMARY
V
(BR)DSS
= 100V; R
= 0.6 ID= 1.8A
DS(ON)
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT223 package
•
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Relay and Solenoid driving
•
Motor control
SOT223
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN10A11GFTA 7” 12mm 1000 units
ZXMN10A11GFTC 13” 12mm 4000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMN
10A11
ISSUE 1 - MARCH 2002
Top View
1
ZXMN10A11G
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range Tj:T
THERMAL RESISTANCE
I
D
DM
S
SM
P
P
DSS
GS
D
D
stg
100 V
20 V
1.8
1.4
1.3
5.8 A
4.6 A
5.8 A
2
16
3.9
31
-55 to +150 °C
mW/°C
mW/°C
A
W
W
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
R
R
θJA
θJA
62.5 °C/W
32 °C/W
ISSUE 1 - MARCH 2002
2
CHARACTERISTICS
ZXMN10A11G
ISSUE 1 - MARCH 2002
3
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