ZETEX ZXMN10A09K Technical data
查询ZXMN10A09K供应商
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage power
management applications.
=100V : R
=0.085 ; ID=7.7A
DS(on)
ZXMN10A09K
FEATURES
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
D-Pak (T0-252) package
•
APPLICATIONS
•
DC-DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMN10A09KTC 13” 16mm 2,500 units
TAPE
WIDTH
QUANTITY PER
REEL
DEVICE MARKING
•
ZXMN
10A09K
K
A
P
D
PINOUT
ISSUE 6 - JANUARY 2005
TOP VIEW
1
SEMICONDUCTORS
ZXMN10A09K
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V
=10V; TA=25°C
GS
@VGS=10V; TA=70°C
@VGS=10V; TA=25°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
=25°C
A
(c)
(a)
(b)
(b)
(a)
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Operating and storage temperature range T
DSS
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
j,Tstg
100 V
±20 V
7.7
6.2
5
27 A
11 A
27 A
4.3
34.4
mW/°C
10.1
80.8
mW/°C
2.15
17.2
mW/°C
-55 to +150 °C
A
A
A
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature.
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(a)
(b)
(d)
R
R
R
⍜JA
⍜JA
⍜JA
29 °C/W
12.3 °C/W
58 °C/W
SEMICONDUCTORS
ISSUE 6 - JANUARY 2005
2
TYPICAL CHARACTERISTICS
ZXMN10A09K
ISSUE 6 - JANUARY 2005
3
SEMICONDUCTORS
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