ZETEX ZXMHC6A07T8 Technical data
查询ZXMHC6A07T8供应商
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
(BR)DSS
(BR)DSS
= 60V; R
= -60V; R
= 0.300 ;ID= 1.8A
DS(ON)
= 0.425 ;ID= -1.5A
DS(ON)
ZXMHC6A07T8
FEATURES
Low On - Resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
•
SM8 package
APPLICATIONS
•
Motor drive
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMHC6A07T8TA 7
ZXMHC6A07T8TC 13’‘ 12mm
TAPE
WIDTH
’‘ 12mm
DEVICE MARKING
•
ZXMH
C6A07
QUANTITY
PER REEL
1000 units
4000 units
G
1
D,1D
G
2
SM8
S
1
2
S
2
PINOUT DIAGRAM
S
S
4
D,3D
3
G
4
4
G
3
ISSUE 1 - JULY 2004
Top View
1
SEMICONDUCTORS
ZXMHC6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V
=10V; TA=25⬚C
GS
@VGS=10V; TA=70⬚C
@VGS=10V; TA=25⬚C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
=25°C
A
(c)
(a)(d)
(b)(d)
(b)(d)
(a)(d)
(b)
I
I
I
I
P
DSS
GS
D
DM
S
SM
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b)(d)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
(a)(d)
(b)(d)
R
θJA
R
θJA
60 -60 V
⫾20 ⫾20 V
1.8
1.4
1.6
-1.5
-1.2
-1.3
8.7 -7.5 A
2.3 -2.1 A
8.7 -7.5 A
1.3
10.4
mW/°C
1.7
13.6
mW/°C
-55 to +150 °C
96 °C/W
73 °C/W
A
A
W
W
Notes
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t ≤ 10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300S pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
ISSUE 1 - JULY 2004
SEMICONDUCTORS
2
TYPICAL CHARACTERISTICS
ZXMHC6A07T8
ISSUE 1 - JULY 2004
3
SEMICONDUCTORS
ZXMHC6A07T8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
(3)
(1)(3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING
(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
(1)
(3)
(3)
(1)
= 25°C unless otherwise stated)
amb
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
g
fs
iss
oss
rss
d(on)
r
d(off)
f
g
g
gs
gd
V
SD
t
rr
Q
rr
60 V ID=250µA, VGS=0V
100 nA VGS=±20V, VDS=0V
1 3.0 V ID=250µA, VDS=V
0.300
0.450
2.3 S VDS=15V,ID=1.8A
166 pF
19.5 pF
8.7 pF
1.8 ns
1.4 ns
4.9 ns
2.0 ns
1.65 nC VDS=30V,VGS=5V,
3.2 nC
0.67 nC
0.82 nC
0.85 0.95 V TJ=25°C, IS=0.45A,
20.5 ns TJ=25°C, IF=1.8A,
21.3 nC
1µAVDS=60V, VGS=0V
VGS=10V, ID=1.8A
Ω
V
Ω
=4.5V, ID=1.3A
GS
V
=40V, VGS=0V,
DS
f=1MHz
=30V, ID=1.8A
V
DD
R
≅6.0Ω,VGS=10V
G
I
=1.8A
D
V
=30V,VGS=10V,
DS
I
=1.8A
D
V
=0V
GS
di/dt= 100A/µs
GS
SEMICONDUCTORS
ISSUE 1 - JULY 2004
4
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