Datasheet ZXMHC6A07T8 Datasheet (ZETEX)

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COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE

SUMMARY
N-Channel V

P-Channel V

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

(BR)DSS

(BR)DSS

= 60V; R

= -60V; R

= 0.300 ;ID= 1.8A

DS(ON)

= 0.425 ;ID= -1.5A

DS(ON)

ZXMHC6A07T8

FEATURES

Low On - Resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

•

SM8 package

APPLICATIONS

•

Motor drive

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMHC6A07T8TA 7
ZXMHC6A07T8TC 13’‘ 12mm

TAPE

WIDTH

’‘ 12mm

DEVICE MARKING

•

ZXMH
C6A07

QUANTITY

PER REEL

1000 units
4000 units

G

1

D,1D

G

2

SM8

S

1

2

S

2

PINOUT DIAGRAM

S

S

4

D,3D

3

G

4

4

G

3

ISSUE 1 - JULY 2004

Top View

1

SEMICONDUCTORS

ZXMHC6A07T8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-Channel UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V

=10V; TA=25⬚C

GS

@VGS=10V; TA=70⬚C
@VGS=10V; TA=25⬚C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T

=25°C

A

(c)

(a)(d)

(b)(d)
(b)(d)
(a)(d)

(b)

I

I
I
I
P

DSS

GS

D

DM

S

SM

D

Linear Derating Factor
Power Dissipation at T

=25°C

A

(b)(d)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient

(a)(d)

(b)(d)

R

θJA

R

θJA

60 -60 V

⫾20 ⫾20 V

1.8

1.4

1.6

-1.5

-1.2

-1.3

8.7 -7.5 A

2.3 -2.1 A

8.7 -7.5 A

1.3

10.4

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

96 °C/W
73 °C/W

A
A

W

W

Notes
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t ≤ 10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300␮S pulse width limited by maximum junction temperature. Refer

to Transient Thermal Impedance graph.

(d) For device with one active die.

ISSUE 1 - JULY 2004

SEMICONDUCTORS

2

TYPICAL CHARACTERISTICS

ZXMHC6A07T8

ISSUE 1 - JULY 2004

3

SEMICONDUCTORS

ZXMHC6A07T8

N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC

(3)

(1)(3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(1)

(3)

(3)

(1)

= 25°C unless otherwise stated)

amb

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

60 V ID=250µA, VGS=0V

100 nA VGS=±20V, VDS=0V

1 3.0 V ID=250µA, VDS=V

0.300

0.450

2.3 S VDS=15V,ID=1.8A

166 pF

19.5 pF

8.7 pF

1.8 ns

1.4 ns

4.9 ns

2.0 ns

1.65 nC VDS=30V,VGS=5V,

3.2 nC

0.67 nC

0.82 nC

0.85 0.95 V TJ=25°C, IS=0.45A,

20.5 ns TJ=25°C, IF=1.8A,

21.3 nC

1µAVDS=60V, VGS=0V

VGS=10V, ID=1.8A

Ω

V

Ω

=4.5V, ID=1.3A

GS

V

=40V, VGS=0V,

DS

f=1MHz

=30V, ID=1.8A

V

DD

R

≅6.0Ω,VGS=10V

G

I

=1.8A

D

V

=30V,VGS=10V,

DS

I

=1.8A

D

V

=0V

GS

di/dt= 100A/µs

GS

SEMICONDUCTORS

ISSUE 1 - JULY 2004

4

ZXMHC6A07T8

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC

(3)

(1)(3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(1)

(3)

(3)

(1)

= 25°C unless otherwise stated)

amb

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

-60 V ID=-250µA, VGS=0V

-1 ␮AVDS=-60V, VGS=0V

100 nA VGS=±20V, VDS=0V

-1.0 V ID=-250µA, VDS=V

0.425

0.630

1.8 S VDS=-15V,ID=-0.9A

233 pF

17.4 pF

9.6 pF

1.6 ns

2.3 ns
13 ns

5.8 ns

2.4 nC VDS=-30V,VGS=-5V,

5.1 nC

0.7 nC

0.7 nC

-0.85 -0.95 V TJ=25°C, IS=-0.8A,

22.6 ns TJ=25°C, IF=-0.9A,

23.2 nC

VGS=-10V, ID=-0.9A

Ω

V

Ω

=-4.5V, ID=-0.8A

GS

V

=-30 V, VGS=0V,

DS

f=1MHz

V

=-30V, ID=-1A

DD

R

G≅6.0

I

=-0.9A

D

=-30V,VGS=-10V,

V

DS

I

=-0.9A

D

V

=0V

GS

di/dt= 100A/µs

Ω,VGS=-10V

GS

ISSUE 1 - JULY 2004

5

SEMICONDUCTORS

ZXMHC6A07T8

N-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

ISSUE 1 - JULY 2004

6

N-CHANNEL TYPICAL CHARACTERISTICS

ZXMHC6A07T8

ISSUE 1 - JULY 2004

7

SEMICONDUCTORS

ZXMHC6A07T8

P-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

ISSUE 1 - JULY 2004

8

P-CHANNEL TYPICAL CHARACTERISTICS

ZXMHC6A07T8

ISSUE 1 - JULY 2004

9

SEMICONDUCTORS

ZXMHC6A07T8

PACKAGE OUTLINE

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimeters Inches

DIM

Millimeters Inches

Min Max Typ. Min Max Typ. Min Max Typ. Min Max Typ.

A - 1.7 - - 0.067 - e1 - - 4.59 - - 0.1807

A1 0.02 0.1 - 0.008 0.004 - e2 - - 1.53 - - 0.0602

b - - 0.7 - - 0.0275 He 6.7 7.3 - 0.264 0.287 -

c 0.24 0.32 - 0.009 0.013 - Lp 0.9 - - 0.035 - ­D 6.3 6.7 - 0.248 0.264 - ␣ - 15° - - 15° ­E 3.3 3.7 - 0.130 0.145 - ␤ - - 10° - - 10°

© Zetex Semiconductors plc 2004

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ISSUE 1 - JULY 2004

SEMICONDUCTORS

10

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