Zetex ZXMD65P02N8TA, ZXMD65P02N8TC Datasheet
ZXMD65P02N8
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure thatcombines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXMD65P02N8TA 7” 12mm 500 units
ZXMD65P02N8TC 13” 12mm 2500 units
DEVICE MARKING
•
=-20V; R
Low on-resistance
Fast switching speed
Low threshold
ZXMD
65P02
=0.050⍀D=-5.1A
DS(ON)
PER REEL
SO8
Top View
PROVISIONAL ISSUE A - MAY 2001
33
ZXMD65P02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current V
=-4.5V; TA=25°C (b)(d)
GS
V
=-4.5V; TA=70°C (b)(d)
GS
V
=-4.5V; TA=25°C (a)(d)
GS
Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I
Pulsed Source Current (Body Diode)(c)(d) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
DSS
GS
I
D
DM
S
SM
P
D
P
D
P
D
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R
θJA
θJA
θJA
-20 V
±12
-5.1
-4.1
-4.0
-18 A
-3.1 A
-18 A
1.25
10
mW/°C
1.75
14
mW/°C
2.0
16
mW/°C
100 °C/W
71.4 °C/W
62.5 °C/W
V
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - MAY 2001
Loading...