Zetex ZXMD65P02N8TA, ZXMD65P02N8TC Datasheet

ZXMD65P02N8

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZXMD65P02N8TA 7” 12mm 500 units ZXMD65P02N8TC 13” 12mm 2500 units

DEVICE MARKING

•

=-20V; R

Low on-resistance Fast switching speed Low threshold

ZXMD 65P02

=0.050⍀D=-5.1A

DS(ON)

PER REEL

SO8

Top View

PROVISIONAL ISSUE A - MAY 2001

ZXMD65P02N8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V Gate- Source Voltage V Continuous Drain Current V

=-4.5V; TA=25°C (b)(d)

=-4.5V; TA=70°C (b)(d)

=-4.5V; TA=25°C (a)(d)

Pulsed Drain Current (c)(d) I Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T Linear Derating Factor

=25°C (a)(d)

=25°C (a)(e)

=25°C (b)(d)

DSS

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R Junction to Ambient (a)(e) R Junction to Ambient (b)(d) R

θJA

-20 V

±12

-5.1

-4.1

-4.0

-18 A

-3.1 A

-18 A

1.25 10

mW/°C

1.75 14

mW/°C

2.0 16

mW/°C

100 °C/W

71.4 °C/W

62.5 °C/W

V A

NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum

junction temperature. (d) For device with one active die. (e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - MAY 2001

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