Zetex ZXMD63P02XTA, ZXMD63P02XTC Datasheet
ZXMD63P02X
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXMD63P02XTA 7 12mm embossed 1000 units
ZXMD63P02XTC 13 12mm embossed 4000 units
=-20V; R
DS(ON)
(inches)
=0.27V; ID=-1.7A
TAPE WIDTH (mm) QUANTITY
PER REEL
MSOP8
Top View
DEVICE MARKING
• ZXM63P02
PROVISIONAL ISSUE A - JUNE 1999
41
ZXMD63P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)(d)
GS
=4.5V; TA=70°C)(b)(d)
GS
Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I
Pulsed Source Current (Body Diode)(c)(d) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
P
DSS
GS
D
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(d) R
Junction to Ambient (a)(e) R
θJA
θJA
θJA
-20 V
± 12
-1.7
-1.35
-9.6 A
-1.4 A
-9.6 A
0.87
6.9
mW/°C
1.04
8.3
mW/°C
1.25
10
mW/°C
-55 to +150 °C
143 °C/W
100 °C/W
120 °C/W
V
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
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CHARACTERISTICS
ZXMD63P02X
100
Refer Note (a)
10
1
ID - Drain Current (A)
0.1
DC
1s
100ms
10ms
1ms
100µs
0.1 10 100
1
VDS- Drain-Source Voltage (V)
Safe Operating Area
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 0.1 100
D=0.5
D=0.2
D=0.1
D=0.05
Refer N ote (b)
Single Pu lse
0.01 100.001 1
Pulse Width (s)
Transient Thermal Impedance
1.4
1.2
1.0
0.8
Refer N ote (b)
Refer Note (a)
0.6
0.4
0.2
0
Max Power Dissipation (Watts)
0 80 160
60 14020 40 100 120
T - Temperature (°)
Derating Curve
160
D=0.5
D=0.2
D=0.1
D=0. 05
Refer Note (a )
Single Pu lse
140
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 10000.001 0.01 0.1 1 10
Pulse Width (s)
Transient Thermal Impedance
100
PROVISIONAL ISSUE A - JUNE 1999
43
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