Zetex ZXMD63N03XTC, ZXMD63N03XTA Datasheet
ZXMD63N03X
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXMD63N03XTA 7 12mm embossed 1000 units
ZXMD63N03XTC 13 12mm embossed 4000 units
=30V; R
DS(ON)
(inches)
=0.135V; ID=2.3A
TAPE WIDTH (mm) QUANTITY
PER REEL
MSOP8
Top View
DEVICE MARKING
• ZXM63N03
PROVISIONAL ISSUE A - JULY 1999
33
ZXMD63N03X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)(d)
GS
=4.5V; TA=70°C)(b)(d)
GS
Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I
Pulsed Source Current (Body Diode)(c)(d) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
P
DSS
GS
D
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(d) R
Junction to Ambient (a)(e) R
θJA
θJA
θJA
30 V
± 20
2.3
1.8
14 A
1.5 A
14 A
0.87
6.9
mW/°C
1.04
8.3
mW/°C
1.25
10
mW/°C
-55 to +150 °C
143 °C/W
100 °C/W
120 °C/W
V
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - JULY 1999
34
CHARACTERISTICS
ZXMD63N03X
100
10
10
- Drain Current (A)
D
I
0.1
Refer Note (a)
DC
1s
100ms
10ms
1ms
100us
0.1 10 100
10
VDS- Drain-Source Voltage (V)
Safe Operating Area
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 0.1 100
D=0.5
D=0.2
D=0.1
D=0.05
Refer No te (b)
Single Pulse
0.01 100.001 1
Pulse Width (s)
Transient Thermal Impedance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Max Power Dissipation (Watts)
0 80 160
60 14020 40 100 120
Refer Note (b)
Refer Note (a)
T - Temperature (°)
Derating Curve
160
D=0.5
D=0.2
D=0.1
D=0.05
Refer No te (a)
Single Pulse
140
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 10000.001 0.01 0.1 1 10
Pulse Width (s)
Transient Thermal Impedance
100
PROVISIONAL ISSUE A - JULY 1999
35
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