Zetex ZXMD63C02XTA, ZXMD63C02XTC Datasheet

ZXMD63C02X

20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
N-CHANNEL: V
P-CHANNEL: V

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMD63C02XTA 7 12mm embossed 1000 units

ZXMD63C02XTC 13 12mm embossed 4000 units

(BR)DSS

(BR)DSS

(inches)

=20V; R

=-20V; R

DS(ON)

DS(ON)

TAPE WIDTH (mm) QUANTITY

=0.13V; ID=2.4A

=0.27V; ID=-1.7A

N-CHANNEL

PER REEL

MSOP8

P-CHANNEL

Top View

DEVICE MARKING

• ZXM63C02

PROVISIONAL ISSUE A - JUNE 1999

1

ZXMD63C02X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)(d)

GS

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

D

P

D

P

D

j:Tstg

DSS

GS

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

20 -20 V

± 12

2.4

1.9

-1.7

-1.35

19 -9.6 A

-1.5 -1.4 A
19 -9.6 A

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

143 °C/W

100 °C/W

120 °C/W

V
A

W

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - JUNE 1999

2

N-CHANNEL CHARACTERISTICS

ZXMD63C02X

100

Refer N ote (a)

10

1

- Drain Current (A)

D

I

0.1

DC

1s

100ms

10ms

1ms

100us

0.1 10 100

1

VDS - Drain-Source Voltage (V)

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0.0001 0.1 100

Refer Note (b)

D=0.5

D=0.2

D=0.1

D=0.05

0

Single Pu lse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer Note (b)
Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

D=0.5

D=0.2

D=0.1

D=0.05

Refer N ote (a)

Pulse Width (s)

Single Pulse

100

Transient Thermal Impedance

PROVISIONAL ISSUE A - JUNE 1999

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ZXMD63C02X

P-CHANNEL CHARACTERISTICS

100

Refer Note (a)

10

1

ID - Drain Current (A)

0.1

DC

1s

100ms

10ms

1ms

100µs

0.1 10 100

VDS - Drain-Source Voltage (V)

1

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0.05

Refer No te (b)

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer Note (b)
Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (a)

Single Pulse

Pulse Width (s)

100

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

Transient Thermal Impedance

PROVISIONAL ISSUE A - JUNE 1999

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