ZETEX ZXMC4559DN8 Technical data

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COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel V

P-Channel V

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

(BR)DSS

(BR)DSS

= 60V; R

= -60V; R

= 0.055 ;ID= 4.7A

DS(ON)

= 0.105 ;ID= -3.9A

DS(ON)

ZXMC4559DN8

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

• Low profile SOIC package

APPLICATIONS

•

Motor Drive

•

LCD backlighting

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMC4559DN8TA 7
ZXMC4559DN8TC 13’‘ 12mm 2500 units

WIDTH

’‘ 12mm 500 units

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMC
4559

SO8

Q2 = P-CHANNELQ1 = N-CHANNEL

PINOUT

ISSUE 5 - MAY 2005

Top view

1

SEMICONDUCTORS

ZXMC4559DN8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL N-Channel P-Channel UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current @V

=10V; TA=25⬚C

GS

@VGS=10V; TA=25⬚C
@VGS=10V; TA=25⬚C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)

(b) (d)
(b) (d)
(a) (d)

(b)

Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C

(a) (d)

I

I
I

P

DSS
GS

D

DM
S
SM

D

Linear Derating Factor
Power Dissipation at TA=25°C

(a) (e)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(b) (d)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient
Junction to Ambient

Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.
(d) For a device with one active die.
(e) For device with 2 active die running at equal power.

(a) (d)
(b) (e)
(b) (d)

R
R
R

⍜JA
⍜JA
⍜JA

60 -60 V

⫾20 ⫾20 V

4.7

3.7

3.6

-3.9

-2.8

-2.6

22.2 -18.3 A

3.4 -3.2 A

22.2 -18.3 A

1.25
10

mW/°C

1.8
14

mW/°C

2.1
17

mW/°C

-55 to +150 °C

100 °C/W

69 °C/W
58 °C/W

A
A
A

W

W

W

SEMICONDUCTORS

ISSUE 5 - MAY 2005

2

CHARACTERISTICS

ZXMC4559DN8

ISSUE 5 - MAY 2005

3

SEMICONDUCTORS