ZETEX ZXMC3AM832 Technical data

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MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel V

P-Channel V

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:

(BR)DSS

(BR)DSS

Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count

= 30V; R

= -30V; R

= 0.12 ;ID= 3.7A

DS(ON)

= 0.21 ;ID= -2.7A

DS(ON)

ZXMC3AM832

3mm x 2mm Dual Die MLP

FEATURES

• Low on - resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

3mm x 2mm MLP

APPLICATIONS

•

MOSFET gate drive

•

LCD backlight inverters

•

Motor control

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMC3AM832TA 7
ZXMC3AM832TC 13’‘ 8mm 10000 units

WIDTH

’‘ 8mm 3000 units

QUANTITY

PER REEL

DEVICE MARKING

C01

PINOUT

D2

G2

underside view

5

678

D2

S2

4

3 x 2 Dual MLP

D1

D1

S1

G1

1

23

PROVISIONAL ISSUE E - JULY 2004

1

ZXMC3AM832

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-Channel UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V

@VGS=10V; TA=25⬚C
@VGS=10V; TA=25⬚C

=10V; TA=25⬚C

GS

(b)(f)

(b)(f)

(a)(f)

Pulsed Drain Current I
Continuous Source Current (Body Diode)

(b)(f)

Pulsed Source Current (Body Diode) I
Power Dissipation at TA=25°C

(a)(f)

I

I

P

DSS
GS

D

DM
S
SM

D

Linear Derating Factor
Power Dissipation at TA=25°C

(b)(f)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(c)(f)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(d)(f)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(d)(g)

P

D

Linear Derating Factor

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient

Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The

copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed

pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

(a)(f)
(b)(f)
(c)(f)
(d)(f)
(d)(g)
(e)(g)

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

30 -30 V

⫾20 ⫾20 V

3.7

3.0

2.9

-2.7

-2.2

-2.1

12.4 -9.2 A

2.4 -2.8 A

12.4 -9.2 A

1.5
12

mW/°C

2.45

19.6

mW/°C

1
8

mW/°C

1.13
8

mW/°C

1.7

13.6

mW/°C

83.3 °C/W
51 °C/W

125 °C/W
111 °C/W

73.5 °C/W

41.7 °C/W

A
A

W

W

W

W

W

PROVISIONAL ISSUE E - JULY 2004

2

TYPICAL CHARACTERISTICS

ZXMC3AM832

R

DS(ON)

10

Limited

1

DC

1s

100m

D rainC urre n t (A )

D

I

10m

100ms

No te(a)(f)

Single Pulse, T

10ms

=25°C

amb

1ms

100us

110

VDSDrain-Source Voltage (V)

N-channel Safe Operating Area

No te(a)(f)

80

60

D=0.5

40

D=0.2

20

Therm al Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

R

DS(ON)

10

Limited

1

DC

1s

100m

D rainC urre n t (A )

D

10m

-I

100ms

No te(a)(f)

Single Pulse, T

amb

10ms

=25°C

1ms

100us

110

-VDSDrain-Source Voltage (V)

P-channel Safe Operating Area

3.5

3.0

2.5

2.0

2oz Cu
No te(e)(g)

2oz Cu
No te(a)(f)

1.5

1.0

1oz Cu

0.5

No te(d)(f)

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Tem perature (°C)

D eratingCurv e

1oz Cu
No te(d)(g)

3.5

3.0

2.5

2.0

T

=25°C

amb

=150°C

T

jmax

Continuous

2oz copper
No te(f)

2oz copper
No te(g)

1.5

1.0

Dissipation (W )

D

P

0.5

0.0

0.1 1 10 100

1oz copper
No te(f)

BoardCuArea (sqcm)

Pow er Dissipation v Board Area

PROVISIONAL ISSUE E - JULY 2004

1oz copper
No te(g)

225
200
175
150

1oz copper
No te(f)

1oz copper
Note (g)

125
100

75

2oz copper

50

No te(f)

25

Therm al Resistance (°C/W)

0

0.1 1 10 100

2oz copper
Note (g)

BoardCuArea (sqcm)

Thermal Resistance v Board Area

3