ZETEX ZXMC3AM832 Technical data

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MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel V

P-Channel V

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:

(BR)DSS

(BR)DSS

Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count

= 30V; R

= -30V; R

= 0.12 ;ID= 3.7A

DS(ON)

= 0.21 ;ID= -2.7A

DS(ON)

ZXMC3AM832

3mm x 2mm Dual Die MLP

FEATURES

• Low on - resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

3mm x 2mm MLP

APPLICATIONS

•

MOSFET gate drive

•

LCD backlight inverters

•

Motor control

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMC3AM832TA 7
ZXMC3AM832TC 13’‘ 8mm 10000 units

WIDTH

’‘ 8mm 3000 units

QUANTITY

PER REEL

DEVICE MARKING

C01

PINOUT

D2

G2

underside view

5

678

D2

S2

4

3 x 2 Dual MLP

D1

D1

S1

G1

1

23

PROVISIONAL ISSUE E - JULY 2004

1

ZXMC3AM832

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-Channel UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V

@VGS=10V; TA=25⬚C
@VGS=10V; TA=25⬚C

=10V; TA=25⬚C

GS

(b)(f)

(b)(f)

(a)(f)

Pulsed Drain Current I
Continuous Source Current (Body Diode)

(b)(f)

Pulsed Source Current (Body Diode) I
Power Dissipation at TA=25°C

(a)(f)

I

I

P

DSS
GS

D

DM
S
SM

D

Linear Derating Factor
Power Dissipation at TA=25°C

(b)(f)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(c)(f)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(d)(f)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C

(d)(g)

P

D

Linear Derating Factor

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Ambient

Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The

copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed

pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

(a)(f)
(b)(f)
(c)(f)
(d)(f)
(d)(g)
(e)(g)

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

30 -30 V

⫾20 ⫾20 V

3.7

3.0

2.9

-2.7

-2.2

-2.1

12.4 -9.2 A

2.4 -2.8 A

12.4 -9.2 A

1.5
12

mW/°C

2.45

19.6

mW/°C

1
8

mW/°C

1.13
8

mW/°C

1.7

13.6

mW/°C

83.3 °C/W
51 °C/W

125 °C/W
111 °C/W

73.5 °C/W

41.7 °C/W

A
A

W

W

W

W

W

PROVISIONAL ISSUE E - JULY 2004

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TYPICAL CHARACTERISTICS

ZXMC3AM832

R

DS(ON)

10

Limited

1

DC

1s

100m

D rainC urre n t (A )

D

I

10m

100ms

No te(a)(f)

Single Pulse, T

10ms

=25°C

amb

1ms

100us

110

VDSDrain-Source Voltage (V)

N-channel Safe Operating Area

No te(a)(f)

80

60

D=0.5

40

D=0.2

20

Therm al Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

R

DS(ON)

10

Limited

1

DC

1s

100m

D rainC urre n t (A )

D

10m

-I

100ms

No te(a)(f)

Single Pulse, T

amb

10ms

=25°C

1ms

100us

110

-VDSDrain-Source Voltage (V)

P-channel Safe Operating Area

3.5

3.0

2.5

2.0

2oz Cu
No te(e)(g)

2oz Cu
No te(a)(f)

1.5

1.0

1oz Cu

0.5

No te(d)(f)

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Tem perature (°C)

D eratingCurv e

1oz Cu
No te(d)(g)

3.5

3.0

2.5

2.0

T

=25°C

amb

=150°C

T

jmax

Continuous

2oz copper
No te(f)

2oz copper
No te(g)

1.5

1.0

Dissipation (W )

D

P

0.5

0.0

0.1 1 10 100

1oz copper
No te(f)

BoardCuArea (sqcm)

Pow er Dissipation v Board Area

PROVISIONAL ISSUE E - JULY 2004

1oz copper
No te(g)

225
200
175
150

1oz copper
No te(f)

1oz copper
Note (g)

125
100

75

2oz copper

50

No te(f)

25

Therm al Resistance (°C/W)

0

0.1 1 10 100

2oz copper
Note (g)

BoardCuArea (sqcm)

Thermal Resistance v Board Area

3

ZXMC3AM832

N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC

(3)

(1)(3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(1)

(3)

(3)

(1)

= 25°C unless otherwise stated)

amb

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

30 V

0.5

100 nA

1V

0.106 0.12

0.18

3.5 S VDS=4.5V,ID=2.5A

190 pF

38 pF
20 pF

1.7 ns

2.3 ns

6.6 ns

2.9 ns

2.3 nC VDS=15V,VGS=5V,

3.9 nC

0.6 nC

0.9 nC

0.85 0.95 V TJ=25°C, IS=1.7A,

17.7 ns TJ=25°C, IF=2.5A,

13.0 nC

I

=250µA, VGS=0V

D

VDS=30V, VGS=0V

µA

V

GS

I

=250µA, VDS=V

D

VGS=10V, ID=2.5A

Ω

V

Ω

=4.5V, ID=2.0A

GS

V

=25V,VGS=0V,

DS

f=1MHz

V

DD

R

=6.0Ω,VGS=10V

G

I

=2.5A

D

V

=15V,VGS=10V,

DS

I

=2.5A

D

V

=0V

GS

di/dt= 100A/µ s

=±20V, VDS=0V

=15V, ID=2.5A

GS

PROVISIONAL ISSUE E - JULY 2004

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ZXMC3AM832

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC

(3)

(1)(3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(3)

(3)

(1)

= 25°C unless otherwise stated)

amb

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

-30 V

100 nA VGS=⫾20V, VDS=0V

-0.8 V ID=-250␮A, VDS=V

0.210

0.330

2.48 S VDS=-15V,ID=-1.4A

204 pF

39.8 pF

25.8 pF

1.5 ns

2.8 ns

11.3 ns

7.5 ns

2.58 nC VDS=-15V,VGS=-5V,

5.15 nC

0.65 nC

0.92 nC

-0.85 -0.95 V TJ=25°C, IS=-1.1A,

18.6 ns TJ=25°C, IF=-0.95A,

14.8 nC

I

=-250µA, VGS=0V

D

1 ␮AVDS=-30V, VGS=0V

VGS=-10V, ID=-1.4A

Ω

V

Ω

=-4.5V, ID=-1.1A

GS

V

=-15 V, VGS=0V,

DS

f=1MHz

=-15V, ID=-1A

V

DD

R

=6.0Ω,VGS=-10V

G

I

=-1.4A

D

=-15V,VGS=-10V,

V

DS

I

=-1.4A

D

V

=0V

GS

di/dt= 100A/µ s

GS

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE E - JULY 2004

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ZXMC3AM832

N-CHANNEL TYPICAL CHARACTERISTICS

T = 25°C

10

10V

5V

7V

1

V

GS

D rainC urre n t (A )

0.1

D

I

0.1 1 10

VDSDrain-Source Voltage (V)

Ou tpu t Cha racte ristics

10

VDS= 10V

T = 150°C

1

D rainC urre n t (A )

D

I

0.1

2.0 2.5 3.0 3.5 4.0 4.5 5.0

T=25°C

VGSG a te -S o urceV o lta g e(V )

Typical Transfer Characteristics

4.5V

4V

3.5V

3V

2.5V

10

T = 150°C

7V10V

5V

1

V

D rainC urre n t (A )

0.1

D

I

GS

0.1 1 10

VDSDrain-Source Voltage (V)

Output Characteristics

1.6

1.4

GS(th)

1.2

andV

1.0

DS(on)

0.8

0.6

N or m a lise dR

0.4

-50 0 50 100 150

Tj Junction Temperature (°C)

VGS= 10V
I

=2.5A

D

VGS=V
ID= 250uA

DS

No rm alisedCurv es v Tem p eratu re

4.5V
4V

3.5V
3V

2.5V

2V

R

DS(on)

V

GS(th)

2.5V

3V

1

0.1

Drain-Source On-Resistance
R

T=25°C

DS(on)

0.1 1 10

IDD rainCu rre n t (A )

O n-R e s is t anc evD r ainCu r r e nt

3.5V

4V

4.5V

V

5V

10V

GS

7V

10

T = 150°C

1

T = 25°C

0.1

Reverse Drain Current (A)

SD

I

0.4 0.6 0.8 1.0 1.2

VSDSource-Drain Voltage (V)

Source-Drain Diode Forward Voltage

PROVISIONAL ISSUE E - JULY 2004

6

N-CHANNEL TYPICAL CHARACTERISTICS

ZXMC3AM832

300
250
200
150
100

50

C Capacitance (pF)

0

0.1 1 10

C

ISS

VDS-Drain-SourceVoltage(V)

C

OSS

VGS=0V
f=1MHz

C

RSS

10

ID=2.5A

8

6

4

2

G ate-S o urc eVo ltag e(V)

GS

0

V

01234

VDS= 15V

Q - Charge (nC)

Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage

PROVISIONAL ISSUE E - JULY 2004

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ZXMC3AM832

P-CHANNEL TYPICAL CHARACTERISTICS

10V

5V

4V

3.5V
3V

2.5V

-V
2V

GS

0.1

10

T=25°C

1

Drain Current (A)

D

0.01

-I

0.1 1 10

-VDSDrain-Source Voltage (V)

Ou tpu t Cha racte ristics

T = 150°C

1

T=25°C

Drain Current (A)

0.1

D

-I

-VDS=10V

12345

-VGSGate-Source Voltage (V)

Typical Transfer Characteristics

10

T = 150°C

10V

5V

4V

1

0.1

Drain Current (A)

D

0.01

-I

0.1 1 10

-VDSDrain-Source Voltage (V)

Ou tpu t Cha racte ristics

1.6

1.4

GS (th )

andV

1.2

DS(on)

1.0

0.8

N o rmalisedR

0.6

-50 0 50 100 150

VGS=-10V

=-1.4A

I

D

VGS=V

DS

ID= -250uA

V

Tj Junction Temperature (°C)

No rm alisedCurv es v Tem p eratu re

R

GS(th )

3.5V
3V

2.5V
2V

-V

1.5V

DS(on)

GS

100

2V

-V

GS

2.5V

10

1

Drain-SourceOn-Resistance (Ω)

0.1

DS(on)

R

0.1 1 10

-IDDrain Current (A)

On -Re sistancev Drain Curren t

3V

T=25°C

3.5V
4V

5V

10V

10

T = 150°C

1

0.1

T=25°C

Reverse DrainCurrent(A)

SD

-I

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSDSource-Drain Voltage (V)

Source-Drain Diode Forward Voltage

PROVISIONAL ISSUE E - JULY 2004

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P-CHANNEL TYPICAL CHARACTERISTICS

ZXMC3AM832

300
250
200
150
100

50

C Capacitance (pF)

0

0.1 1 10

C

ISS

C

VGS=0V
f=1MHz

OSS

C

RSS

-VDS-Drain-SourceVoltage(V)

Capacitance v Drain-Source Voltage

10

ID= -1.4A

8

6

4

2

G ate -S o u rceVo ltag e(V )

0

GS

0246

-V

Q- Charge(nC)

VDS= -15V

Gate-SourceVoltagevGateCharge

PROVISIONAL ISSUE E - JULY 2004

9

ZXMC3AM832

MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)

CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES

PACKAGE DIMENSIONS

DIM

Millimeters Inches

Min Max Min Max Min Max Min Max

DIM

Millimeters Inches

A 0.80 1.00 0.0315 0.0394 e 0.65 BSC 0.0256 BSC
A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC
A2 0.65 0.75 0.0256 0.0295 E2 0.43 0.63 0.017 0.0248
A3 0.15 0.25 0.006 0.0098 L 0.20 0.45 0.0079 0.0177

b 0.24 0.34 0.0095 0.0134 L2 0.00 0.125 0.00 0.005
b1 0.17 0.30 0.0068 0.0118 r 0.075 BSC 0.0029 BSC

D 3.00 BSC 0.118 BSC ⍜ 0⬚ 12⬚ 0⬚ 12⬚
D2 0.82 1.02 0.0323 0.0402 - ---­D3 1.01 1.21 0.0398 0.0476 - ----

© Zetex Semiconductors plc 2004

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10

PROVISIONAL ISSUE E - JULY 2004