ZETEX ZXMC3A18DN8 Technical data
查询ZXMC3A18DN8_05供应商
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V
P-Channel = V
(BR)DSS
(BR)DSS
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
•
= 30V : RDS(on)= 0.025 ; ID= 7.6A
= -30V : RDS(on)= 0.035 ; ID= -6.3A
ZXMC3A18DN8
8
O
S
Fast switching speed
•
Low threshold
•
• Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
Motor Drive
•
LCD backlighting
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMC3A18DN8TA 7” 12mm 500 units
ZXMC3A18DN8TC 13” 12mm 2500 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
•
ZXMC
3A18
Q1 = N-channel Q2 = P-channel
Top View
ISSUE 1 - MAY 2005
1
SEMICONDUCTORS
ZXMC3A18DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
= 10V; TA=25°C)
(V
GS
(VGS= 10V; TA=70°C)
(VGS= 10V; TA=25°C)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(a) (d)
Power Dissipation at T
=25°C
A
(b)(d)
(b)(d)
(a)(d)
(b)
(c)
DSS
I
I
DM
I
I
SM
P
GS
D
S
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(a) (e)
P
D
Linear Derating Factor
Power Dissipation at T
=25°C
A
(b) (d)
P
D
Linear Derating Factor
Operating and Storage Temperature Range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
Junction to Ambient
(a) (d)
(a) (e)
(b) (d)
R
R
R
⍜JA
⍜JA
⍜JA
30 -30 V
±20 ±20 V
7.6
6.1
5.8
-6.3
-5.0
-4.8
37 -30 A
3.6 3.2 A
37 30 A
1.25
10
1.8
14
2.1
17
-55 to +150 °C
100 °C/W
70 °C/W
60 °C/W
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300s, d⬍= 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MAY 2005
SEMICONDUCTORS
2
CHARACTERISTICS
ZXMC3A18DN8
ISSUE 1 - MAY 2005
3
SEMICONDUCTORS
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