ZETEX ZXMC3A16DN8 Technical data
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COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
(BR)DSS
(BR)DSS
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
thatcombinesthebenefitsoflowon-resistance with fast switching speed.This
makes them ideal for high efficiency, low voltage, power management
applications.
= 30V; R
= -30V; R
= 0.035 ;ID= 6.4A
DS(ON)
= 0.048 ;ID= -5.4A
DS(ON)
ZXMC3A16DN8
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
•
APPLICATIONS
•
Motor Drive
•
LCD backlighting
ORDERING INFORMATION
DEVICE REEL TAPE
ZXMC3A16DN8TA 7
ZXMC3A16DN8TC 13’‘ 12mm 2500 units
WIDTH
’‘ 12mm 500 units
QUANTITY
PER REEL
DEVICE MARKING
ZXMC
3A16
SO8
Q2 = P-CHANNELQ1 = N-CHANNEL
PINOUT
PROVISIONAL ISSUE F - JULY 2004
Top view
1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL N-Channel P-Channel UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V
=10V; TA=25⬚C
GS
@VGS=10V; TA=70⬚C
@VGS=10V; TA=25⬚C
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C
(c)
(a)(d)
(b)(d)
(b)(d)
(a)(d)
(b)
Linear Derating Factor
Power Dissipation at TA=25°C
(a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C
(b)(d)
Linear Derating Factor
Operating and Storage Temperature Range T
DSS
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
j:Tstg
30 -30 V
⫾20 ⫾20 V
6.4
5.1
4.9
-5.4
-4.3
-4.1
30 -25 A
3.4 -3.2 A
30 -25 A
1.25
10
mW/°C
1.8
14
mW/°C
2.1
17
mW/°C
-55 to +150 °C
A
A
A
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
Junction to Ambient
Junction to Ambient
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
(a)(d)
(b)(e)
(b)(d)
R
θJA
R
θJA
R
θJA
100 °C/W
70 °C/W
60 °C/W
PROVISIONAL ISSUE F - JULY 2004
2
CHARACTERISTICS
ZXMC3A16DN8
PROVISIONAL ISSUE F - JULY 2004
3
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