Zetex ZXM66P03N8TA, ZXM66P03N8TC Datasheet
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure thatcombines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXM66P03N8TA 7” 12mm 500 units
ZXM66P03N8TC 13” 12mm 2500 units
=-30V; R
Low on-resistance
Fast switching speed
Low threshold
DS(ON)
=0.025
=-7.9A
D
PER REEL
ZXM66P03N8
SO8
S
S
S
1
23
4
Top View
8
76
5
D
D
D
DEVICE MARKING
•
ZXM6
6N03
PROVISIONAL ISSUE A - MAY 2001
ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current V
=-10V; TA=25°C(b)
GS
V
=-10V; TA=70°C(b)
GS
V
=-10V; TA=25°C(a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
-30 V
±20
-7.9
-6.3
-6.25
-28 A
-4.1 A
-28 A
1.56
12.5
mW/°C
2.5
20
mW/°C
-55 to +150 °C
80 °C/W
50 °C/W
V
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
PROVISIONAL ISSUE A - MAY 2001
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