Zetex ZXM66P02N8TA, ZXM66P02N8TC Datasheet

20V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure thatcombines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

•

•

•

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZXM66P02N8TA 7” 12mm 500 units
ZXM66P02N8TC 7” 12mm 2500 units

=-20V; R

Low on-resistance
Fast switching speed
Low threshold

DS(ON)

=0.025

=-8.0A

D

PER REEL

ZXM66P02N8

SO8

S
S
S

1
23

4

Top View

8
76

5

D
D
D

DEVICE MARKING

•

ZXM6
6P02

PROVISIONAL ISSUE A - MAY 2001

1

ZXM66P02N8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current V

=-4.5V; TA=25°C (b)

GS

V

=-4.5V; TA=70°C (b)

GS

V

=-4.5V; TA=25°C (a)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R

θJA

θJA

-20 V

±12

-8.0

-6.5

-6.4

-28 A

-4.15 A

-28 A

1.56

12.5

mW/°C

2.5
20

mW/°C

-55 to +150 °C

80 °C/W
50 °C/W

V
A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum

junction temperature.

PROVISIONAL ISSUE A - MAY 2001

2