Zetex ZXM64P035L3 Datasheet
ZXM64P035L3
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
·
· Fast switching speed
· Low threshold
· Low gate drive
· TO220 package
= -35V: R
= 0.075 : ID= -12A
DS(on)
APPLICATIONS
·
100W Class D Audio Output Stage
·
Motor Control
ORDERING INFORMATION
DEVICE MULTIPLES
ZXM64P035L3 1000
DEVICE MARKING
·
ZXM6
4P035
PROVISIONAL ISSUE A - JANUARY 2002
Front View
1
ZXM64P035L3
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (b)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(b)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
A
A
= -10V; TC=25°C)(a)
GS
(V
= -10V; TA=25°C)(b)
GS
=25°C (a)
=25°C (b)
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Case (a)
Junction to Ambient (b)
R
R
θJC
θJA
-35 V
⫾20 V
-12
-3.3
-19 A
-2.3 A
-19 A
20
160
1.5
12
-55 to +150 °C
6.25 °C/W
83.3 °C/W
mW/°C
mW/°C
A
W
W
PROVISIONAL ISSUE A - JANUARY 2002
2
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