Zetex ZXM62N03E6TA, ZXM62N03E6TC Datasheet

30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXM62N03E6TA 7 8mm embossed 3000 units

ZXM62N03E6TC 13 8mm embossed 10000 units

=30V; R

DS(ON)

(inches)

=0.11V; ID=3.2A

TAPE WIDTH (mm) QUANTITY

PER REEL

ZXM62N03E6

SOT23-6

Top View

DEVICE MARKING

• 2N03

PROVISIONAL ISSUE A - MAY 1999

97

ZXM62N03E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V

(V

=10V; TA=25°C)(b)

GS

=10V; TA=70°C)(b)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

DSS

GS

I

D

DM

S

SM

P

D

P

D

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

θJA

θJA

30 V

± 20

3.2

V

A

2.6
18 A

2.1 A
18 A

1.1

8.8

1.7

13.6

W

mW/°C

W

mW/°C

113 °C/W

73 °C/W

PROVISIONAL ISSUE A - MAY 1999

98

CHARACTERISTICS

ZXM62N03E6

100

Refer Note (a)

10

1

- Drain Current (A)

D

I

0.1

DC

1s

100ms

10ms

1ms

100µs

0.1 10 100

1

VDS- Drain-Source Voltage (V)

Safe Operating Area

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (b)

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

2

1.5

Refer No te (b)

1

Refer Note (a)

0.5

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (a)

Pulse Width (s)

Single Pulse

100

Transient Thermal Impedance

PROVISIONAL ISSUE A - MAY 1999

99