Zetex ZXFBF08W20, ZXFBF08W20TC Datasheet

8 Channel Buffer Device
ZXFBF08
DEVICE DESCRIPTION
The ZXFBF08 is a low cost, high slew rate, octal buffer amplifier. Built usingtheZetexCA700technology,this buffer has a small signal bandwidth of greater than 100MHz and a 1 volt pk-pk bandwidth of greater than 20 MHz. Each channel draws only 1.9mA. The device operates froma ±5 voltsupply, which makes it ideal in a majority of applications.
This space savingbuffermay be used in awidevariety of applications such as, video switching matrix, multi-channel instrumentation equipment, and A/D input buffer, etc.
FEATURES AND BENEFITS
8 Buffers per package
100MHz bandwidth
Low cost
Low supply current (1.9mA per buffer)
No thermal runaway
20 pin SOIC package
CONNECTION DIAGRAM
OUT1
IN1
1
20
2
19
OUT8
IN8
APPLICATIONS
Video Switching Matrix input buffer
Instrumentation
Multi-channel A/D input buffer
Multi-isolation buffer
PART NUMBER
ZXFBF08W20 SOIC20W ZXFBF08
ORDERING INFORMATION
PART NUMBER CONTAINER INCREMENT
ZXFBF08W20TC Reel 13” 1000
RELATED PRODUCTS
ZXFBF04 4 Channel Buffer
ZXFBF05 4 Channel Buffer with high capacitance
drive
ZXFBF25 4 Channel Buffer with output enable
PACKAGE PART MARK
V­OUT2
IN2 OUT3
IN3 V-
3
4
5
6
7
8
OUT4
IN4
ISSUE 2 - OCTOBER 2000
10 11
18
17
16
15
14
13
12
V+ OUT7 IN7 OUT6 IN6 V+ OUT59
IN5
1
ZXFBF08
ABSOLUTE MAXIMUM RATINGS
Voltage on any pin 20V (relative to V-) Operating temperature range 0 to 70°C (de-rated for -40 to 85°C) Storage Temperature -55 to 125°C
ELECTRICAL CHARACTERISTICS
Test Conditions: Temperature =25°C, V+ = 5.00, V- = -5.00V, RL= 1kΩ, CL= 10pF
Parameter Conditions Min. Typical Max. Units
Offset Voltage V Offset Voltage Drift V Supply Current All inputs = 0V 15 25 mA Input Bias Current V Output Voltage
DC Gain
DC Gain
Sink Current V Source Current V Input Resistance 10 20 100 Output Resistance 5 10 15 Bandwidth 20mVp-p,
Slew Rate 40 Voltage Noise 10 – 100 kHz 15 Differential Gain
NTSC F = 3.58MHz, V Differential Phase
NTSC
Differential Gain PAL F = 4.43MHz, V
Differential Phase PAL
Channel Isolation
= 0V -15 - 15 mV
in
= 0V 20 V/°C
in
= 0V 0.1 0.5 2.0
in
R
=1k
L
= 10k
R
L
= ± 0.5V, RL=1k
V
in
= 0.0V
V
offset
V
= ±0.5V, RL=1k
in
= 0.25V
V
offset
=0V,V
in
in
=0V,V
out
out
0.95 0.98 1.00 V/V
0.95 0.99 1.00 V/V
=0.5V 1.0 2.2 5.0 mA =-0.5V 6.0 9.0 12.0 mA
±1 ±4
100
1.0Vp-p
20
0.1 %
DC ∆V
= 0 to 0.714V
in
0.15 Degrees
= 0.286Vp-p,
in
0.1 %
= 0.286Vp-p,
in
DC ∆V
V F=4MHz
= 0 to 0.714V
in
= 370mVp-p, RL = 1k
in
0.15 Degrees
-60 dB
µA V
M
MHz
V/µs nV/√Hz
NOTES
Test circuit for measuring channel isolation.
Channel Isolation = 20 x LOG10(V
ISSUE 2 - OCTOBER 2000
out/Vin
)dB
Vin=370mV pk-pk,
F=4MHz
2
V
out
RL = 1k
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