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ZXFBF05
4 Channel Buffer Device with high capacitance load capability
DEVICE DESCRIPTION
The ZXFBF05 is a low cost, high slew rate, quad buffer
amplifier. Built usingthe Zetex CA700 technology,this
buffer has a small signal bandwidth of greater than
100MHz and a 1 volt pk-pk bandwidth of greater than
20 MHz. Each channel draws only 7.5mA. The device
operates froma ±5 volt supply, which makes itideal in
a majority of applications.
This space savingbuffer may beused in awide variety
of applications such as, video switching matrix,
multi-channel instrumentation equipment, and A/D
input buffer, etc.
FEATURES AND BENEFITS
• 4 Buffers per package
• Low distortion Class A O/P
• 100MHz bandwidth
• Low cost
• Designed for up to 300pF load
• Low supply current (7.5mA per buffer)
•
No thermal runaway
•
14 pin SOIC package
APPLICATIONS
Video Switching Matrix input buffer
•
Instrumentation
•
Multi-channel A/D input buffer
•
Multi-isolation buffer
•
PART
NUMBER
ZXFBF05N14 SOIC14N ZXFBF05
ORDERING INFORMATION
PART NUMBER CONTAINER INCREMENT
ZXFBF05N14TA Reel 7” 500
ZXFBF05N14TC Reel 13” 2500
RELATED PRODUCTS
ZXFBF04 4 Channel Buffer
ZXFBF08 8 Channel Buffer
ZXFBF25 4 Channel Buffer with output enable
PACKAGE PART MARK
CONNECTION DIAGRAM
OUT1
NC
IN1
V+
IN2
NC
OUT2
14 PIN SOIC PACKAGE
ISSUE 1 - FEBRUARY 2001
OUT4
NC
IN4
VIN3
NC
OUT3
1
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ZXFBF05
ABSOLUTE MAXIMUM RATINGS
Voltage on any pin 20V (relative to V-)
Operating temperature range 0 to 70°C (de-rated for -40 to 85°C)
Storage Temperature -55 to 125°C
ELECTRICAL CHARACTERISTICS
Test Conditions: Temperature =25°C, V+ = 5.00, V- = -5.00V, RL= 1kΩ, CL= 10pF
Parameter Conditions Min. Typical Max. Units
Offset Voltage V
Offset Voltage Drift V
Supply Current All inputs = 0V 5.0 30 40 mA
Input Bias Current V
Output Voltage
DC Gain
DC Gain
Sink Current V
Source Current V
Input Resistance 10 20 100
Output Resistance 5 10 15
Bandwidth 20mVp-p,
Slew Rate 40
Voltage Noise 10 – 100 kHz 15
Differential Gain
NTSC F = 3.58MHz, V
Differential Phase
NTSC
Differential Gain
PAL F = 4.43MHz, V
Differential Phase
PAL
Channel Isolation
= 0V -25 - 25 mV
in
= 0V 20 V/°C
in
= 0V 0.1 1.0 2.0
in
R
= 200Ω
L
= ± 0.5V, RL=1kΩ
V
in
= 0.0V
V
offset
V
= ±0.5V, RL=1kΩ
in
= 0.25V
V
offset
=0V,V
in
in
=0V,V
out
out
0.95 0.98 1.00 V/V
0.95 0.98 1.00 V/V
=0.5V 4.0 6.0 12.0 mA
=-0.5V 8.0 15.0 18.0 mA
±1 V
100
1.0Vp-p
20
0.1 %
DC ∆V
= 0 to 0.714V
in
0.15 Degrees
= 0.286Vp-p,
in
0.1 %
= 0.286Vp-p,
in
DC ∆V
V
F=4MHz
= 0 to 0.714V
in
= 370mVp-p, RL = 1kΩ
in
0.15 Degrees
-60 dB
µA
MΩ
Ω
MHz
V/µs
nV/√Hz
NOTES
Test circuit for measuring channel isolation.
Channel Isolation = 20 x LOG10(V
ISSUE 1 - FEBRUARY 2001
out/Vin
)dB
Vin=370mV pk-pk,
F=4MHz
2
V
out
RL = 1kΩ