ENHANCED HIGH-SIDE CURRENT MONITOR
ZXCT1010
DESCRIPTION
The ZXCT1010 is a high side current sense monitor.
Using this device eliminates the need to disrupt the
ground plane when sensing a load current.
It is an enhanced version of the ZXCT1009 offering
reduced typical output offset and improved accuracy
at low sense voltage.
Thewideinputvoltage rangeof 20Vdown toas lowas
2.5V make it suitable for a range of applications. A
minimum operating current of just 4µA, combined
with its SOT23-5 package make suitable for portable
battery equipment.
FEATURES
• Low cost, accurate high-side current sensing.
• Output voltage scaling.
• Up to 2.5V sense voltage.
• 2.5V – 20V supply range.
• 300nA typical offset current.
• 3.5µA quiescent current.
• 1% typical accuracy.
•
SOT23 -5 package.
APPLICATIONS
Battery Chargers
•
Smart Battery Packs
•
DC Motor control
•
Over current monitor
•
Power Management
•
Programmable current source
•
APPLICATION CIRCUIT
V
in
R
sense
V
in
ZXCT1010
GND
Load
I
out
R
out
To Load
V
out
ISSUE 8 - JANUARY 2004
ORDERING INFORMATION
DEVICE REEL
ZXCT1010E5TA 7” 8mm 3,000 units
PARTMARK 101
PACKAGE SOT23-5
1
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
SEMICONDUCTORS
ZXCT1010
ABSOLUTE MAXIMUM RATINGS
Voltage on any pin -0.6V to 20V (relative to GND)
Continuous output current 25mA
Continuous sense voltage V
+ 0.5V > V
in
Operating Temperature -40 to 85°C
Storage Temperature -55 to 150°C
Package Power Dissipation (T
= 25°C)
A
SOT23-5 500mW
ELECTRICAL CHARACTERISTICS
Test Conditions TA= 25°C, Vin= 5V, R
SYMBOL PARAMETER CONDITIONS LIMITS UNIT
V
in
I
out
I
q
V
sense
I
sense
1
VCCRange 2.5 20 V
Output current V
Ground pin current V
2
Sense Voltage 0 2500 mV
Load pin
input current
Acc Accuracy
Gm Transconductance,
I
out/Vsense
BW Bandwidth RF P
1
Includes input offset voltage contribution
2
V
sense=Vin-Vload
3
-20dBm=63mVp-p into 50Ω
out
V
V
V
V
R
V
V
V
= 100Ω.
=0V
sense
= 10mV
sense
= 100mV
sense
= 200mV
sense
=1V
sense
= 0V 3.5 8 µA
sense
= 0.1Ω
sense
= 200mV
sense
= -20dBm
in
= 10mV dc
sense
= 100mV dc
sense
sense
†
> Vin– 5V
Min Typ Max
0
85
0.975
1.95
9.7
0.3
100
1.00
2.00
10.0
-2.5 2.5 %
10000 µA/V
3
300
2
10
115
1.025
2.05
10.3
µA
µA
mA
mA
mA
100 nA
kHz
MHz
SEMICONDUCTORS
ISSUE 8 - JANUARY 2004
2