250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT23-6 versions are also available.
FEATURES
High voltage
•
Low on-resistance
•
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary P-channel Type ZVN4525G
• SOT223 package
APPLICATIONS
•
Earth Recall and dialling switches
•
Electronic hook switches
•
High Voltage Power MOSFET Drivers
•
Telecom call routers
•
Solid state relays
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
ZVP4525GTA 7 8mm embossed 1000 units
ZVP4525GTC 13 8mm embossed 4000 units
TAPE WIDTH (mm) QUANTITY
PER REEL
ZVP4525G
SOT223
S
D
Top View
D
G
DEVICE MARKING
•
ZVP4525G
ISSUE 1 - MARCH 2001
1
ZVP4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)(a)
GS
(V
=10V; TA=70°C)(a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
Operating and Storage Temperature Range T
I
D
I
D
DM
S
SM
P
DSS
GS
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
250 V
±40
-265
-212
mA
mA
-1 A
-0.75 A
-1 A
2
16
mW/°C
-55 to +150 °C
63 °C/W
26 °C/W
V
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2