Zetex ZVP4424A Datasheet

E-Line

TO92 Compatible

ZVP4424C

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 2  SEPTEMBER 94

FEATURES
* 240 Volt V
*R

DS(on)

* Low threshold
APPLICATIONS
* Electronic Hook Switch

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

=9Ω

DS

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

ZVP4424A

D
G
S

E-Line

TO92 Compatible

-240 V

-200 mA

-1 A

± 40

750 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold
Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain
Current

On-State Drain Current I

Static Drain-Source
On-State Resistance

Forward
Transconductance (1) (2)

Input Capacitance (2) C

Common Source Output
Capacitance (2)

Reverse Transfer
Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

V

GSS

I

DSS

D(on)

R

g

C

C

d(on)

r

d(off)

f

GS(th)

DS(on)

fs

iss

oss

rss

(1) Measured under pulsed conditions. Width=300
(3) Switching times measured with 50

-240 V ID=-1mA, VGS=0V

DSS

-0.7 -1.4 -2.0 V ID=-1mA, VDS= V

100 nA

-10

µA

-100

µA

=± 40V, V

V

GS

V

=-240 V, VGS=0

DS

=-190V, VGS=0V, T=125°C

V

DS

-0.75 -1.0 A VDS=-10 V, VGS=-10V

7.1

8.8911

VGS=-10V,ID=-200mA

Ω

V

Ω

GS

=-3.5V,ID=-100mA

125 mS VDS=-10V,ID=-0.2A

100 200 pF

18 25 pF

=-25V, VGS=0V, f=1MHz

V

DS

515pF

815ns

815ns

26 40 ns

V

DD

V

GEN

≈−50V, I

=-10V

20 30 ns

Ω source impedance and <5ns rise time on a pulse generator

µs. Duty cycle ≤2% (2) Sample test.

3-436

=0V

DS

=-0.25A,

D

GS

TYPICAL CHARACTERISTICS

ZVP4424A

-1.2

-1.0

-0.8

t (Amps)

n

-0.6

-0.4

-0.2

- Drain Curre

D

I

0

0 -2 -4 -6 -8 -10

V

- Drain Source Voltage (Volts)

DS

Saturation Characteristics

400

300

200

100

-Transconductance (mS)

fs

g

0

300µs Pulsed T e st

DS

=-10V

V

0 -0.2 -0.4 -0.6 -0.8 -1.0

ID- Drain Current (Amps

Transconductance v drain current

300µs Pulsed Test

GS

=-10V

V

-2.5V

)

-5V

-4V

-3V

-2V

-1.2

-1.0

ps)

-0.8

Am
(

nt

e

-0.6

r

-0.4

Drain Cur

-0.2

-

D

I

0

0-2-4-6-8-10

VDS=-10V
300µs Pulsed Test

VGS - Gate Source Voltage (Volts)

Transfer Characteristics

400

300

200

100

-Transconductance (mS)

fs

g

0

0-2-4-6

300µs Pulsed Test

DS

=-10V

V

VGS-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

100

(Ω)

VGS=-2V

10

1

-0.01

RDS(on)-Drain Source On Resistance

-2.5V

-3V

-10V

300µs Pulsed Test

-0.1 -10

Drain Current (Amps)

ID-

-1

On-resistance vs Drain Current

2.4

2.2

2.0

S(th)
G

1.8

V

1.6

nd

a

1.4

)
n

1.2

S(o

1.0

D

0.8

ed R

0.6

0.4

0.2

Normalis

0.0

-50

Normalised R

u

o

S

-

n

Drai

-25 0 25 50 75

Junction Temperature (°C)

and V

DS(on)

GS(th)

V

GS=

-10V

rce

G

Vo

ID=0.2A

Resi

ate

l

tag

o

DS(

e R

c

n

ta

s

T

h

res

h

o

l

d

e

V

GS

(

T

H

)

V

GS=VDS

ID=-1mA

125

100 150

vs Temperature

n)

3-437