Zetex ZVP2110A Datasheet

P-CHANNEL ENHANCEMENT

Switc

easured

source

pedance and <5ns

ato

D
G
S

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES
* 100 Volt V
*R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

=8Ω

DS

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVP2110A

E-Line

TO92 Compatible

-100 V

-230 mA

-3 A

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold

Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain

Current
On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance

(1)(2)
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer

Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)
r
d(off)
f

-100 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-1

-100

V

GS

VDS=-100 V, VGS=0

µA

V

µA

DS

-750 mA VDS=-25 V, VGS=-10V
8

VGS=-10V,ID=-375mA

Ω

125 mS VDS=-25V,ID=-375mA

100 pF
35 pF VDS=-25V, VGS=0V, f=1MHz

10 pF

7ns
15 ns
12 ns

V

DD

15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.

hing times m

with 50Ω

3-421

im

rise time on a pulse gener

GS

=± 20V, VDS=0V

=-80 V, VGS=0V, T=125°C(2)

≈-25V, ID=-375mA

r

(
3
)

ZVP2110A

TYPICAL CHARACTERISTI C S

-1.6

-1.4

Amps)

-1.2

t (

n

-1.0

e

r

-0.8

-0.6

- Drain Cur

-0.4

)
n
O

-0.2

D(

I

0

VGS=

-20V

-16V

-12V

-10V

-9V

-8V

-7V

-6V

0 -10 -20 -30 -40 -50

VDS - Drain Source Voltage (Volts)

Output Characteristics

-5V

-4.5V

-4V

-4V

-3.5V

-1.6

-1.4

ps)
Am

-1.2

(
nt

-1.0

e

r

-0.8

-0.6

Drain Cur

-

-0.4

)
n
O

-0.2

D(

I

0

0-2 -4-6 -8 -10

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

VGS=

-20V

-16V

-12V

-10V

-9V

-7V

-5V

-4.5V

-4V

-3.5V

-8V

-6V

-8

-6

Voltage (Volts)

-4

-2

Drain Source

0

DS-

V

0-2-4-6-8-10

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

(Ω)

100

VGS=-4V

-5V

10

-7V

-Drain Source On Resistance

1

10

DS(on)

R

ID-Drain Current (mA)

100 1000

On-resistance v drain current

-10V

-20V

ID=

-0.5A

-0.25A

-0.1A

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

Drain Current (Amps)

)
n

-0.2

O
D(

I

0

VDS=-10V

0-2-4-6-8-10

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

2.6

h)

2.4

S(t
G

2.2

2.0

and V

1.8

1.6

DS(on)

1.4

R

d

1.2

ise

1.0

mal

r

0.8

No

0.6

-40

-20 0 20 40 60 80

Normalised R

DS(on)

ai

Dr

Ga

u

o

S

-

n

t

e

T

and V

e R

rc

h

r

e

VGS=-10V
ID=-0.375A

DS(

R

e

c

n

ta

is

s

e

s

h

o

ld

V

o

l

t

ag

120

100 140 160

GS(th)

vs Temperature

n

o

e

V

)

VGS=VDS
ID=-1mA

GS

(

th

)

180°C