Zetex ZVP2106G Datasheet

SOT223 P-CHANNEL ENHANCEMENT

ZVP2106G

MODE VERTICAL DMOS FET

ISSUE 3  MARCH 96

FEATURES
*60 Volt V
*R

DS(on)

DS

=5Ω

PARTMARKING DETAIL: - ZVP2106
COMPLEMENTARY TYPE: - ZVN2106G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

=25°C I

amb

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown
Voltage

Gate-Source Threshold
Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain
Current

On-State Drain Current(1) I

Static Drain-Source On-State
Resistance (1)

Forward Transconductance
(1)(2)

Input Capacitance (2) C

Common Source Output
Capacitance (2)

Reverse Transfer
Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300
(2) Sample test.
(3) Switching times measured with 50

BV

DSS

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

Ω source impedance and <5ns rise time on a pulse generator

DS

D

DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

amb

-60 V ID=-1mA, VGS=0V

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-0.5

-100

µA
µA

V

GS

V

DS

V

DS

-1 A VDS=-18 V, VGS=-10V

5

VGS=-10V,ID=-500mA

Ω

150 mS VDS=-18V,ID=-500mA

100 pF

60 pF VDS=-18V, VGS=0V, f=1MHz

20 pF

7ns

15 ns

12 ns

V

DD

15 ns

µs. Duty cycle ≤2%

3 - 426

D

G

-60 V

-450 mA

-4 A

± 20

2W

-55 to +150 °C

GS

=± 20V, V

DS

=0V

=-60 V, VGS=0
=-48 V, VGS=0V, T=125°C(2)

≈-18V, I

=-500mA

D

S

D

V

ZVP2106G

TYPICAL CHARACTERISTICS

ZVP2106G

ps)
Am

t (

n

e

r
Cur
ain

Dr
te

Sta
On-

-

)
n
O

D(

I

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5
0

V

GS=

-20V

-18V

-14V

-12V

-10V

-9V

-8V

-7V

VDS - Drain Source Volta ge (Volts)

Output Characteristics

-10

-8

-6

Voltage (Volts)

-4

-2

Drain Source

0

DS-

V

0-2 -4 -6 -8-10

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

-6V

-5V

-4V

I

D=

-1A

-0.5A

-0.25A

-2.0

-1.8

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

-On-State Drain Current (Amps)

0

)
n

0-2-4-6-8-100 -10 -20 -30 -40 -50

D(O

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

On-State Drain Current (Amps)

-

)
n
O

D(

0 -2 -4 -6 -8 -10

I

V

DS=

-10V

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

VGS=

-10V

-9V

-8V

-7V

-6V

-5V

-4V

-3.5V

(Ω)

10

5

VGS=-5V

-Drain Source Resistance

1

DS(ON)

-0.1 -1.0

R

ID-Drain Current

On-resistance v drain current

-6V

-7V

(Amps)

-8V

-10V -9V

-2.0

2.6

2.4

(th)

S

2.2

G

V

2.0

nd

a

1.8

n)
o

1.6

(
S
D

1.4

1.2

1.0

0.8

Normalised R

0.6

-40

e R

rc

u

o

S

-

ain

Dr

G

ate

T

h

res

-20 0 20 40 60 80

DS(

R

e

c

n

ta

s

i

s

e

h

o

l

d

V

o

l

120

100 140 160

)

n

o

V

GS=

-10V

I

D=-

0.5A

V

GS=VDS

ID=-1mA

t

ag

e

V

GS

(

t

h)

180

Tj-Junction Temperature (°C)

Normalised R

DS(on)

and V

GS(th)

vs Temperature

3 - 427