Zetex ZVP1320F Datasheet

SOT23 P-CHANNEL ENHANCEMENT

ZVP1320F

G

S

MODE VERTICAL DMOS FET

ISSUE 3  JANUARY 1996 ✪

FEATURES

- 200V

*V

DS

D

PARTMARKING DETAIL - MT

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

=25°C I

amb

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

DS

D

DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

(1) Measured under pulsed conditions. Width=300 (3) Switching times measured with 50

-200 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-10

µA

-50

µA

-100 mA VDS=-25V, VGS=-10V

80

Ω

25 mS VDS=-25V, ID=-50mA

50 pF

15 pF VDS=-25V, VGS=0V, f=1MHz

5pF

8ns

8ns

8ns

16 ns

Ω source impedance and <5ns rise time on a pulse generator

µs. Duty cycle ≤2% (2) Sample test.

3 - 423

-200 V

-35 mA

-400 mA

± 20

330 mW

-55 to +150 °C

GS

=± 20V, V

V

GS

V

=-200V, VGS=0V

DS

=-160V, VGS=0V,

V

DS

T=125°C

(2)

DS

=0V

VGS=-10V, ID=-50mA

V

DD

≈-25V, I

=-50mA

D

V

-280

ZVP1320F

ZVP1320F

-240

-200

-160

-120

-80

-40

- Drain Current (mA)

D

I

0

0

VDS - Drain Source Voltage (Volts)

Output Characteristics

TYPICAL CHARACTERISTICS

V

GS=

-6V

-5V

-20V

-10V

-9V

-8V

-7V

-4V

-160

-140

)

-120

mA

-100

( nt

e

-80

r

-60

-40

Drain Cur

-

-20

D

I

0

0-2-4-6-8-10-4 -8 -12 -16 -20 -24 -28 -32 -36 -40

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

VGS=

-20V

-10V

-8V

-7V

-6V

-5V

-4V

-10

-8

-6

Voltage (Volts)

-4

-2

Drain Sourc e

0

DS-

V

0 -2 -4 -6 -8 -10

VGS-

Gate Source Voltage

Vo ltag e Sa turation Characteristics

50

40

30

20

10

C-Capacitance (pF)

0

0 -20 -40 -60 -80 -100

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

(Volts)

-140

-120

I

D=

-60mA

-40mA

-20mA

-100

-80

-60

-40

- Drain Current (mA)

D

I

-20 0

0-2-4-6-8-10

V

DS=

-10V

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

)

60

e(mS

50

c

40

uctan

C

iss

C C

rss

d

30

con

s

20

ran

T d

oss

10

Forwar

-

0

fs

g

V

DS=

-10V

-20 -40 -60 -80

-100

-120

ID-Drain Current (mA)

Transc o n ductance v drain current

3 - 424 3 - 425

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