P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
*R
DS(on)
=80Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-200 V
Continuous Drain Current at T
amb
=25°C I
D
-70 mA
Pulsed Drain Current I
DM
-400 mA
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j:Tstg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-200 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, VDS= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-50
µA
µA
V
DS
=-200 V, VGS=0
V
DS
=-160 V, VGS=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
-100 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
80
Ω
VGS=-10V,ID=-50mA
Forward Transconductance
(1)(2)
g
fs
25 mS VDS=-25V,ID=-50mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
15 pF VDS=-25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈-25V, I
D
=-50mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
8ns
Fall Time (2)(3) t
f
16 ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(
3
E-Line
TO92 Compatible