Zetex ZVP0535A Datasheet

P-CHANNEL ENHANCEMENT
ZVP0535A
MODE VERTICAL DMOS FET
ISSUE 2  MARCH 94
FEATURES * 350 Volt V *R
DS(on)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
D G S
E-Line
TO92 Compatible
-350 V
-50 mA
-480 mA
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
BV
Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain Current
On-State Drain Current(1) I
Static Drain-Source On-State Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2) C
Common Source Output Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
-350 V ID=-1mA, VGS=0V
DSS
-1.5 -4.5 V ID=-1mA, VDS= V
100 nA
-20
-2
µA
mA
V
GS
V
DS
V
DS
T=125°C
-120 mA VDS=-25 V, VGS=-10V
100
VGS=-10V,ID=-50mA
40 mS VDS=-25V,ID=-50mA
120 pF
20 pF VDS=-25 V, VGS=0V, f=1MHz
5pF
10 ns
15 ns
15 ns
V
DD
20 ns
µs. Duty cycle 2%
=± 20V, V
=-350 V, VGS=0 =-280 V, VGS=0V,
(2)
-25V, I
3-409
GS
=0V
DS
=-50mA
D
( 2
ZVP0535A
TYPICAL CHARACTERISTICS
ZVP0535A
-700
-600
-500
-400
-300
-200
-100
- Drain Current (mA)
D
I
0
0 -20 -40 -60 -80 -100
VDS - Drain Source Voltage (Volts)
Output Characteristics
-10
-8
-6
Voltage (Volts)
-4
-2
Drain Source
0
DS-
V
0-2-4-6-8-10
VGS-
Gate Source Voltage
(Volts)
Vo ltag e Sa turation Characteristics
V
-10V
-8V
-6V
-5V
-4V
I
-
-50mA
-25mA
GS=
D=
75mA
-160
-140
-120
-100
nt (mA)
e
-80
r
r
u
-60
C
n
i
a
-40
r D
-
-20
D
I
0
0 -2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
-140
-120
V
-100
nt (mA)
e
r
r
-80
u C
n
i
-60
a
r D
-40
-
D
I
-20 0
0-2 -4 -6-8 -10
DS=
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
-10V
VGS=
-10V
-8V
-6V
-5V
-4V
100
80
60
40
20
C-Capacitance (pF)
0
0 -20 -40 -60 -80 -100
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
)
60
mS
(
e
50
c
n ta
c
40
du
n
o
30
c
s
n
C
C C
a
iss
oss
rss
r
T rd
a orw
F
-
s
f
g
20
10
0
V
DS=
-10V
-20 -40 -60 -80
-100
-120
ID-Drain Current (mA)
Transc o n ductance v drain current
3-410
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