Zetex ZVP0120A Datasheet

P-CHANNEL ENHANCEMENT

p

y

p

ZVP0120A

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES * 200 Volt V *R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

=32Ω

DS

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

D G S

E-Line

TO92 Compatible

-200 V

-110 mA

-1 A

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

-200 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-10

µA

-100

µA

=± 20V, V

V

GS

=-200 V, VGS=0

V

DS

=-160 V, VGS=0V,

V

DS

T=125°C

-250 mA VDS=-25 V, VGS=-10V

32

VGS=-10V,ID=-125mA

Ω

50 mS VDS=-25V,ID=-125mA

100 pF

25 pF VDS=-25 V, VGS=0V, f=1MHz

7pF

7ns

15 ns

V

DD

12 ns

15 ns

(2)

≈−25V, I

3-406

Measured under

ulsed conditions. Width=300µs. Duty c

cle ≤2% (2) Sam

le test.

GS

=0V

DS

=-125mA

D

( 1 )

p

µ

y

y

p

ZVP0120A

TYPICAL CHARACTERISTICS

V

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

-On-State Drain Current (Amps)

0

) n

D(O

I

-20

-18

-16

-14

-12

Voltage (Volts)

-10

-8

-6

-4

-2

Drain Source

0

DS-

V

0-1-2-3-4-5-6-7-8-9-10

Vo ltag e Sa turation Characteristics

GS=

-10V

-8V

-7V

-6V

VDS - Drain Source Voltage (Volts)

Output Characteristics

VGS-Gate Source Voltage (Volts)

-5V

-4.5V

-4V

-3.5V

I

D=

-

300mA

-200mA

-100mA

-50mA

ZVP0120A

-0.4

-0.3

-0.2

-0.1

-On-State Drain Current (Amps)

)

0

n

0-1-2-3 -4-5-6-7-8-9-100 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100

D(O

I

On-State Drain Current (Amps)

-

) n O

D(

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1 0

0-1-2 -3-4-5-6 -7-8-9-10

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

V

-25V

-10V

VGS=

-10V

-8V

-7V

-6V

-5V

-4.5V

-4V

-3.5V

DS=

)

Ω

(

100

50

-Drain Source Resistance

10

DS(ON)

-1 -2 -3 -4 -5 -6 -7-8-9-10

R

VGS-Gate Source Voltage (Volts) Temperature (°C)

On-resistance vs gate-source voltage

I

D=

-300mA

-200mA

-I00mA

-50mA

-20

h) S(t

G

and V

DS(on)

R

d

ise mal

r No

Normalised R

3-407

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

-40

e R

rc

u

o

-S

n

Drai

Ga

t

e

T

h

r

e

-20 0 20 40 60 80

DS(on)

and V

S(o

D

e R

c

tan

s

i

es

s

h

o

ld

V

o

l

t

ag

120

100 140 160

GS(th)

vs Temperature

)

n

e

V

GS=

I

D=-

V

GS=VDS

ID=-1mA

V

GS

(

-10V

0.1A

th

)

180

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