Zetex ZVNL535A Datasheet
N-CHANNEL ENHANCEMENT
p
D
G
S
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
*R
DS(on)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
=40Ω
DS
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVNL535A
E-Line
TO92 Compatible
350 V
90 mA
800 mA
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
Measured under
ulsed conditions. Width=300µs. Duty cycle ≤2%
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
350 V ID=1mA, VGS=0V
DSS
0.5 1.5 V ID=1mA, VDS= V
100 nA
50
400
V
GS
VDS=350 V, VGS=0
µA
V
µA
DS
T=125°C
200 mA VDS=25 V, VGS=5V
40
40
VGS=5V,ID=100mA
Ω
V
Ω
GS
100 mS VDS=25V,ID=100mA
70 pF
10 pF VDS=25 V, VGS=0V, f=1MHz
4pF
7ns
7ns
V
DD
16 ns
10 ns
3-405
GS
=± 20V, VDS=0V
=280 V, VGS=0V,
(2)
=3V,ID=50mA
≈25V, ID=100mA
(
1
)
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