Zetex ZVN4310G Datasheet
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - FEBRUARY 1996
FEATURES
* Very low R
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL - ZVN4310
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance (1)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3) t
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
DS(ON)
= .54Ω
=25°C I
amb
=25°C P
amb
BV
V
GS(th)
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
t
d(on)
r
t
d(off)
f
100 V ID=1mA, VGS=0V
DSS
13VI
9AV
0.6 S VDS=25V,ID=3.3A
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
20 nA
10
µA
100
µA
0.4
0.54
0.75
Ω
Ω
0.5
350 pF
140 pF VDS=25 V, VGS=0V, f=1MHz
20 pF
8ns
25 ns
30 ns
16 ns
ZVN4310G
D
D
G
100 V
1.67 A
12 A
± 20
3W
-55 to +150 °C
=1mA, VDS= V
D
V
=± 20V, VDS=0V
GS
VDS=100V, VGS=0V
V
=80V, VGS=0V, T=125°C(2)
DS
=25V, VGS=10V
DS
VGS=10V, ID=3.3A
V
=5V, ID=1.5A
GS
V
≈25V, V
DD
R
GS
=50Ω
GEN
V
GS
=10V, ID=3A
S
ZVN4310G
TYPICAL CHARACTERISTICS
V
GS=
10V
20V
10
)
9
8
7
nt (Amps
6
e
r
r
5
u
C
4
n
i
a
r
3
D
2
-
D
1
I
0
012345678910
V
DS
- Drain Source Voltage (Volts)
Saturation Characteristics
12V
10
(Ω)
7V
8V9V
6V
5V
4V
1.0
-Drain Source On Resistance
3V
DS(on)
R
0.1
0.1
4V
1
ID-Drain Current (Amps)
10V
6V VGS=3V 8V
5V
10
100
On-resistance v drain current
2.6
2.4
2.2
GS(th)
2.0
d V
n
a
n)
o
DS(
d R
e
Normalis
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
Dr
-25 0 25 50 75
tan
s
i
s
e
e R
ourc
S
n-
i
a
G
ate
T
h
resh
o
100
125 175 200
Tj-Junction Temperature (°C)
Normalised R
500
400
300
200
100
C-Capacitance (pF)
0
0
10
DS(on)
GS(th)
and V
20 30 40 50
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
)
n
o
S(
D
V
GS=
10V
R
e
c
ID=3.3A
V
GS=VDS
ID=1mA
l
d
V
o
l
t
a
g
e
V
GS
150
v Temperature
5
4
S)
(
e
c
n
3
ducta
2
n
o
sc
1
an
r
T
(
TH
)
225
-
fs
0
g
2
0
6810
4
I
D(on)
- Drain Current (Amps)
V
DS=
10V
121416 18 20
Transconductance v drain current
16
14
olts)
oltage (V
V
C
iss
urce
C
oss
-Gate So
C
rss
S
G
V
ID=3A
12
10
8
6
4
2
0
0
123456789101112
Q-Charge (nC)
VDD=
10V
20V
50V
100V
Gate charge v gate-source voltage
3 - 414 3 - 413
Loading...