Zetex ZVN4306A Datasheet

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 – JULY 94

FEATURES
* 60 Volt V
*R
* Spice model available

DS(on)

DS

= 0.33Ω

ZVN4306A

APPLICATIONS
* DC-DC convertors
* Solenoids / relay drivers for automotive

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

=25°C I

amb

Practical Continuous Drain Current at
T

=25°C

amb

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Practical Power Dissipation at T

=25°C P

amb

=25°C* P

amb

Operating and Storage Temperature Range T

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

DS

D

I

DP

DM

GS

tot

totp

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source
Breakdown Voltage

Gate-Source
Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage
Drain Current

On-State Drain
Current(1)

Static Drain-Source
On-State Resistance
(1)

Forward
Transconductance

BV

V

GSS

I

DSS

I

D(on)

R

g

GS(th)

DS(on)

fs

60 V ID=1mA, VGS=0V

DSS

1.3 3 V ID=1mA, VDS=V

100 nA

10

µA

100

µA

12 A VDS=10V, VGS=10V

0.22

0.33

0.45

Ω
Ω

0.32

700 mS VDS=25V,ID=3A

(1)(2)

60 V

1.1 A

1.3 A

15 A

± 20

850 mW

1.13 W

-55 to +150 °C

GS

V

=± 20V, V

GS

V

=60V, VGS=0

DS

V

=48V, VGS=0V, T=125°C(2)

DS

V

=10V,ID=3A

GS

V

=5V, ID=1.5A

GS

=0V

DS

V

3-390

ZVN4306A

ELECTRICAL CHARACTERISTICS (at T
otherwise stated).

= 25°C unless

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Input Capacitance (2) C

Common Source
Output Capacitance

iss

C

oss

350 pF

140 pF VDS=25 V, VGS=0V, f=1MHz

(2)

Reverse Transfer
Capacitance (2)

Turn-On Delay Time
(2)(3)

Rise Time (2)(3) t

Turn-Off Delay Time
(2)(3)

Fall Time (2)(3) t

C

t

d(on)

r

t

d(off)

f

rss

(1) Measured under pulsed conditions. Width=300

30 pF

8ns

25 ns

30 ns

16 ns

µs. Duty cycle ≤2%

V

DD

≈25V, V

=10V, ID=3A

GEN

(2) Sample test.
(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Case

R

th(j-amb)

R

th(j-case)

150

50

°C/W
°C/W

1.0

atts)

0.75

- (W

0.50

0.25

Max Power Dissipation

-40

-20 0 20

Am

bie

nt t

e

mpe

40 60 80 100 120 200180160140

T -Temperature (°C)

Derating curve

150

100

r

atur

e

50

Thermal Resistance (°C/W)

0

0.0001

D.C.

t

1

D=t

1/tP

t

P

D=0.6

D=0.2
D=0.1

D=0.05
Single Pulse

0.001

Pulse Width (seconds)

10 10010.10.01

Maximum transient thermal impedance

3-391