Zetex ZVN4106F Datasheet
SOT23 N-CHANNEL ENHANCEMENT
D
S
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Max Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage D rain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2)g
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
DSS
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
60 V ID=1mA, VGS=0V
1.3 3 V ID=1mA, VDS= V
100 nA
10
µA
50
µA
1AV
2.5
Ω
5
Ω
150 mS VDS=25V, ID=250mA
ZVN4106F
60 V
0.2 A
3A
± 20
330 mW
-55 to +150 °C
GS
V
=± 20V, VDS=0V
GS
VDS=60V, VGS=0
V
=48V, VGS=0V, T=125°C(2)
DS
=25V, VGS=10V
DS
VGS=10V, ID=500mA
V
=5V, ID=200mA
GS
G
V
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) T
Rise Time (2)(3) T
Turn-Off Delay Time (2)(3) T
Fall Time (2)(3) T
C
C
iss
oss
rss
d(on)
r
d(off)
f
35 pF
25 pF VDS=25V, VGS=0V, f=1MHz
8pF
5ns
7ns
V
≈25V, ID=150mA
DD
6ns
8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4106F
D
S
4
VGS=20V
3
2
1
- Drain Current (A)
D
I
0
04 10
268
16V
14V
12V
10V
9V
8V
7V
6V
5V
4V
VDS- Drain Source Voltage (V)
Saturation Characteristics
1.8
ID=0.5A
1.2
0.6
0
Normalised RDS(on) and VGS(th)
-50 50 150
0 100
Tj - Junction Temperature ( °C)
DS(on)
R
GS(th)
V
Normalised RDS(on) & VGS(th) v Temperature
100
10
RDS(on) - Drain Source On Resistance (Ω)
300
200
100
gfs - Transconductance (S)
VGS=3.5V
1
0.01 10
4V
5V
6V
0.1 1
ID- Drain Current (A)
On-Resistance v Drain Current
VDS=10V
0
0.5 1.5
ID(on) - Drain Current (A)
Transconductance v Drain Current
8V
10V
14V
20V
2.01.00
80
60
40
iss
C
20
C - Capacitance (pF)
0
15 45
0 30 60 0 1.8
Coss
Crss
VDS- Drain Source Voltage (V)
Capacitance v Drain Source Voltage
16
ID=0.5A VDD=20V 40V 50V
12
8
4
0
VGS - Gate Source Voltage (V)
0.6 1.2
Q - Charge (nC)
Gate Source Voltage v Gate Charge
3 - 400 3 - 399
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