Zetex ZVN3310F Datasheet
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 ✪
FEATURES
* 100 Volt V
*R
DS(on)
DS
=10Ω
ZVN3310F
D
S
COMPLEMENTARY TYPE - ZVP3310F
G
PARTMARKING DETAIL - MF
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
100 V
100 mA
2A
± 20
V
330 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GSS
I
DSS
D(on)
R
g
C
C
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
100 V ID=1mA, VGS=0V
DSS
0.8 2.4 V ID=1mA, VDS=V
20 nA
1
50
µA
µA
V
GS
V
DS
V
DS
500 mA VDS=25V, VGS=10V
10
VGS=10V, ID=500mA
Ω
100 mS VDS=25V, ID=500mA
40 pF
15 pF VDS=25V, VGS=0V, f=1MHz
5pF
3typ 5 ns
5typ 7 ns
4typ 6 ns
V
DD
5typ 7 ns
GS
=± 20V, V
=0V
DS
=100V, VGS=0
=80V, VGS=0V, T=125°C(2)
≈25V, I
=500mA
D
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 396
TYPICAL CHARACTERISTICS
ZVN3310F
160
)
120
mS
80
ductance (
con
s
40
an
r
-T
s
f
g
0
0
0.2 0.4 0.6 0.8 1.0 1.2
ID- Drain Current (Amps)
Transconductance v drain current
50
40
pF)
(
30
20
pacitance
10
C-Ca
0
0
10 20
30
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
V
DS=
25V
40 50
Ciss
Coss
1.6
1.4
1.2
rent (Amps)
1.0
ur
0.8
0.6
0.4
tate Drain C
0.2
-On-S
0
0246810
D(On)
I
DS
V
- Drain Source
Voltage (Volts)
VGS=
10V
9V
8V
7V
6V
5V
4V
3V
Saturation Characteristics
VDS=
50V
16
14
ts)
oltage (Vol
V
ce
our
te S
a
C
rss
-G
S
G
V
ID=0.6A
12
10
8
6
4
2
0
0
0.2 0.4 0.6 0.8 1.0 1.2
20V
80V
Q-Charge (nC)
Gate charge v gate-source voltage
100
(Ω)
10
ID=
1A
0.5A
0.2A
-Drain Source Resistance
1
DS(ON)
11020
R
VGS-Gate Source Voltage
(Volts)
On-resistance vs gate-source voltage
2.4
h)
2.2
GS(t
2.0
1.8
and V
1.6
n)
1.4
DS(o
1.2
1.0
sed R
0.8
mali
r
0.6
No
0.4
Normalised RDS(on) and VGS(th) vs Temperature
3 - 397
-60
-80
-40
I
0.5A
D=-
esi
e R
c
r
n-Sou
Drai
G
ate
Thre
shol
-20 0 20 40 60 80
T-Temperature (C°)
on)
S(
D
R
ce
stan
d
V
o
lta
ge
100 140 160
120
V
G
S(
t
h)
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