Zetex ZVN3310A Datasheet

N-CHANNEL ENHANCEMENT

D
G
S

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES
* 100 Volt V
*R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

DS

= 10Ω

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVN3310A

E-Line

TO92 Compatible

100 V
200 mA

2A

± 20

625 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold

Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain

Current
On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance(1)(2)g

Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance

(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

100 V ID=1mA, VGS=0V

DSS

0.8 2.4 V ID=1mA, VDS= V

20 nA
1

50

µA
µA

V

GS

V

DS

V

DS

500 mA VDS=25V, VGS=10V

10

VGS=10V,ID=500mA

Ω

100 mS VDS=25V,ID=500mA

40 pF
15 pF VDS=25V, VGS=0V, f=1MHz

5pF

5ns
7ns

V

DD

6ns
7ns

3-378

GS

=± 20V, VDS=0V
=100V, VGS=0

=80V, VGS=0V, T=125°C(2)

≈25V, ID=500mA

D
G
S

TYPICAL CHARACTERISTICS

ZVN3310A

1.4

ps)

1.2

Am
t (

1.0

n

e

r

0.8

0.6

Drain Cur

0.4

e

Stat

0.2

On-

0

-

)
n
O

01020 30 40 50

D(

I

VDS - Drain Source Voltage (Volts)

Output Characteristics

10

8

6

Voltage (Volts)

4

2

Drain Source

0

DS-

V

04 8 121620

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

VGS=
10V
9V
8V

7V
6V

5V

4V
3V

ID=
1A

0.5A

0.2A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-On-State Drain Current (Amps)

0

)
n

0246810

D(O

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

)

s

1.4

1.2

1.0

Current (Amp

0.8

ain

r

0.6

e D

t

0.4

0.2

On-Sta

-

)

0

n
O

D(

0246810

I

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

VDS=
25V

VGS=
10V

9V

8V
7V
6V

5V
4V
3V

)

Ω

100

(

10

-Drain Source Resistance

1

DS(ON)

1234567891020

R

VGS-Gate Source Voltage (Volts)

On-resistance vs gate-source voltage

I

D=

1A

0.5A

0.2A

3-379

2.4

2.2

2.0

GS(th)

1.8

d V

n

1.6

a

n)
o

1.4

DS(

1.2

1.0

0.8

0.6

0.4

Normalised R

-60

-80

Normalised R

n

Drai

G

ate

-20 0 20 40 60 80

-40

T-Temperature (C°)

DS(on)

and V

ID=-0.5A

esi

R

rce

u

o

S

-

T

h

res

h

o

GS(th)

)

n

o

DS(

e R

c

n

ta

s

l

d

V

o

lt

ag

e

V

GS

(

th

)

100 140 160

120

vs Temperature