Zetex ZVN2535A Datasheet
N-CHANNEL ENHANCEMENT
p
D
G
S
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
R
DS(on)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
=35Ω
DS
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVN2535A
E-Line
TO92 Compatible
350 V
90 mA
1A
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CON DITIONS .
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
Measured under
ulsed conditions. Width=300µs. Duty cycle ≤2%
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
350 V ID=1mA, VGS=0V
DSS
1 3 V ID=1mA, VDS= V
20 nA
10
400
V
GS
VDS=350V, VGS=0
µA
V
µA
DS
T=125°C
250 mA VDS=25V, VGS=10V
35
VGS=10V,ID=100mA
Ω
100 mS VDS=25V,ID=100mA
70 pF
10 pF VDS=25 V, VGS=0V, f=1MHz
4pF
7ns
7ns
V
DD
16 ns
10 ns
3-372
GS
=± 20V, VDS=0V
=280V, VGS=0V,
(2)
≈25V, ID=100mA
(
1
)
p
µ
y
y
D
G
S
TYPICAL CHARACTERISTICS
ZVN2535A
800
700
)
600
mA
t (
500
rren
u
400
C
n
i
300
a
Dr
200
)
n
O
100
D(
I
0
0102030405060708090100
VDS - Drain Source Voltage (Volts)
Output Characteristics
20
18
16
14
12
10
Voltage (Volts)
8
6
4
2
Drain Source
0
DS-
V
12345678910
VGS-Gate Source Voltage (Volts)
Vo ltag e Sa turation Characteristics
VGS=
10V
6V
4V
3V
ID=
250mA
100mA
50mA
500
450
400
350
300
250
200
Drain Current (mA)
150
)
n
O
100
D(
I
50
0
0 5 10 15 20 25
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
400
A)
300
(m
t
rren
u
200
C
n
i
a
Dr
100
)
n
O
D(
I
0
01 2 3 4 5 6 7 8 9 10
GS-
V
Gate Source
Voltage (Volts)
Transfer Characteristics
VDS=
10V
VGS=
10V
4V
3V
125
100
pF)
(
75
nce
ita
c
50
pa
Ca
25
C-
0
10 20
30
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
40 50
Ciss
ransconductance (mS)
Coss
-T
s
f
Crss
g
3-373
250
200
150
100
50
0
0100200300400500
ID- Drain Current (mA)
Transconductance v drain current
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