Zetex ZVN2120G Datasheet
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 ✪
FEATURES:
*V
- 200V
DS
DS(ON)
- 10Ω
=25°C I
amb
=25°C P
amb
BV
DSS
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
rss
d(on)
r
d(off)
f
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
200 V ID=1mA, VGS=0V
13VID=1mA, VDS= V
20 nA
10
µA
100
µA
500 mA VDS=25V, VGS=10V
10
Ω
100 mS VDS=25V, ID=250mA
85 pF
20 pF VDS=25V, VGS=0V, f=1MHz
7pF
8ns
8ns
20 ns
12 ns
*R
PARTMARKING DETAIL - ZVN2120
ABSOLUTE MAXIMUM RATINGS.
PA RAM ETE R SY MBO L VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold Volt age V
Gate-Body Leakage I
Zero Gate Voltage D rain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN2120G
D
G
200 V
320 mA
2A
± 20
2W
-55 to +150 °C
V
=± 20V, VDS=0V
GS
VDS=200V, VGS=0V
V
=160V, VGS=0V,
DS
T=125°C
(2)
VGS=10V, ID=250mA
V
≈25V, ID=250mA
DD
V
GS
D
S
3 - 390
TYPICAL CHARACTERISTICS
2.0
1.6
t (Amps)
ren
1.2
Cur
0.8
GS=
V
te Drain
0.4
n-Sta
-O
)
0
01020304050
D(on
I
DS
V
- Drain Source
Voltage (Volts)
Output Characteristics
20
16
12
Voltage (Volts)
8
4
Drain Source
0
DS-
V
02 4 6 8 10
VGS-
Gate Source Voltage
(Volts)
Voltage Saturation Characteristics
10V
1.4
8V
7V
6V
5V
4V
3V
2V
1.2
t (Amps)
1.0
ren
0.8
Cur
0.6
0.4
te Drain
0.2
n-Sta
-O
0
)
D(on
I
246810
0
DS
V
- Drain Source
Voltage (Volts)
10V
GS=
V
8V
7V
6V
5V
4V
3V
2V
Saturation Characteristics
DS=
V
25V
10V
D=
I
1.0A
0.5A
0.1A
1.6
1.4
1.2
t (Amps)
ren
1.0
r
Cu
0.8
in
a
0.6
te Dr
0.4
0.2
n-Sta
-O
0
n)
012345678910
D(O
I
GS-
V
Gate Source
Voltage (Vo lts )
Transfer Characteristics
100
(Ω)
10
-Drain Source Resistance
1
1234567891020
DS(ON)
R
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
2.4
D=
I
1.0A
0.5A
0.1A
GS(th)
V
and
DS(on)
R
ised
Normal
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40
ource
S
n-
Drai
G
ate
Thr
-20 0 20 40 60
es
R
esh
ol
80 120
)
S(on
D
R
ce
tan
is
d V
ol
tag
e
V
GS(T
100 140 160
GS=
V
10V
ID=250mA
GS=VDS
V
ID=1mA
H)
180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3 - 391 3 - 392
Loading...