Zetex ZVN2120A Datasheet
N-CHANNEL ENHANCEMENT
D
G
S
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 200 Volt V
*R
DS(on)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS
= 10Ω
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVN2120A
E-Line
TO92 Compatible
200 V
180 mA
2A
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
200 V ID=1mA, VGS=0V
DSS
1 3 V ID=1mA, VDS= V
20 nA
10
100
V
GS
VDS=200V, VGS=0
µA
V
µA
DS
T=125°C
500 mA VDS=25V, VGS=10V
10
VGS=10V,ID=250mA
Ω
100 mS VDS=25V,ID=250mA
85 pF
20 pF VDS=25 V, VGS=0V, f=1MHz
7pF
8ns
8ns
20 ns
V
DD
12 ns
3-368
GS
=± 20V, VDS=0V
=160V, VGS=0V,
(2)
≈25V, ID=250mA
(
3
D
G
S
TYPICAL CHARACTERISTICS
s)
2.0
p
(Am
t
1.6
1.2
0.8
Drain Curren
ate
t
0.4
-On-S
)
n
0
o
01020304050
D(
I
DS
V
- Drain Source
Output Characteristics
VGS=10V
Voltage (Volts)
ZVN2120A
1.4
8V
7V
6V
5V
4V
3V
2V
1.2
(Amps)
1.0
0.8
0.6
0.4
0.2
-On-State Drain Current
0
)
n
0
o
D(
I
246810
DS
V
- Drain Source
Saturation Characteristics
Voltage (Volts)
10V
VGS=
8V
7V
6V
5V
4V
3V
2V
20
16
12
Voltage (Volts)
8
4
Drain Source
0
DS-
V
0246810
VGS-Gate Source Voltage (Volts)
Vo ltage Saturation Characteristics
100
(Ω)
10
-Drain Source Resistance
1
DS(ON)
1234567891020
R
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
ID=
1.0A
0.5A
0.1A
ID=
1.0A
0.5A
0.1A
3-369
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-On-State Drain Current (Amps)
)
0
n
O
012345678910
D(
I
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
2.4
2.2
h)
S(t
2.0
G
1.8
nd V
1.6
a
1.4
DS(on)
1.2
R
1.0
d
e
s
0.8
0.6
mali
Nor
-40
-20 0 20 40 60
Normalised R
S
-
n
Drai
Gate
T
Tj-Junction Temperature (°C)
DS(on)
and V
rce
u
o
h
res
h
n
ta
s
i
s
e
R
o
l
d
Vo
80 120
100 140 160
GS(th)
)
n
o
DS(
e R
c
VGS=10V
ID=250mA
VGS=VDS
ID=1mA
l
t
a
g
e
V
GS
(
TH)
180
v Temperature
VDS=
25V
10V
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