Zetex ZVN1409A Datasheet

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES
* 90 Volt V
* Low input capacitance
* Fast switching

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t I
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

DS

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVN1409A

D
G
S

E-Line

TO92 Compatible

90 V
10 mA
40 mA

± 20

625 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Breakdown

Voltage
Gate Body Leakage I
Zero Gate Voltage Drain

Current

On State Drain Current (1) I
Static Drain Source O n State

Resistance (1)
Forward Transconductance (1)(2)g

Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance

(2)
Turn-On Delay Time (2)(3)(4) t
Rise Time (2)(3)(4) t
Turn-Off Delay Time (2)(3)(4) t
Fall Time (2)(3)(4) t

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

DSS

90 V ID=0.1mA, VGS=0V

0.8 2.4 V ID=0.1mA, VDS= V

100 nA
1

100 (2)

µA
µA

V

=± 20V, VDS=0V

GS

VDS=90V, VGS=0V
V

=72V, VGS=0V,

DS

T=125°C

10 mA VDS=25 V, VGS=10V

250

2mSV

Ω

VGS=10V,ID=5mA

=25V,ID=10mA

DS

6.5 pF
3pFVDS=25 V, VGS=0V

f=1MHz

0.65 pF

0.3 ns

0.5 ns

0.35 ns

V

≈25V, ID=5mA

DD

0.5 ns

3-358

GS

(
1

TYPICAL CHARACTERISTICS

ZVN1409A

70
60

A)

50

m
t (

n

40

30

Curre
ain

20

Dr

-

D

10

I

0

10 20 30 40 50

VDS - Drain Source Voltage (Volts)

Output Characteristics

10

8

6

Voltage (Volts)

4

2

Drain Source

0

DS-

V

246810

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

VGS=
10V

8V

6V

5V

4V
3V

ID=
24mA

18mA
12mA

50

40

A)
(m

t

30

en

r

r

u

20

C

n

i

a
Dr

10

-

D

I

0

0246810

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

50

40

30

20

-Drain Current (mA)

10

D

I

02 4 6 810

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

VDS=
10V

VGS=
10V

8V

6V

5V

4V
3V

)

1000

Ω

(

500

-Drain Source Resistance

100

DS

1

R

VGS=4V 10V

ID-Drain Current (mA)

On-resistance v drain current

5V

6V

8V

10 100

h)
S(t

G

nd V

a

DS(on)

R

d
ise

mal

r
No

Normalised R

3-359

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

-60

-40

-80

G

ate

-20 0 20 40 60 80

Drai

es

e R

rc

u

o

-S

n

T

h

res

h

o

l

d

)

n

o

S(

D

e R

c

tan

s

i

VGS=10V

ID=5mA

VGS=VDS
ID=1mA

V

o

l

t

ag

e

V

GS(

th

100 140 160

120

)

Tj-Junction Temperature (C°)

DS(on)

and V

GS(th)

vs Temperature