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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt V
* Low input capacitance
* Fast switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t I
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVN1409A
D
G
S
E-Line
TO92 Compatible
90 V
10 mA
40 mA
± 20
625 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Breakdown
Voltage
Gate Body Leakage I
Zero Gate Voltage Drain
Current
On State Drain Current (1) I
Static Drain Source O n State
Resistance (1)
Forward Transconductance (1)(2)g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)(4) t
Rise Time (2)(3)(4) t
Turn-Off Delay Time (2)(3)(4) t
Fall Time (2)(3)(4) t
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
DSS
90 V ID=0.1mA, VGS=0V
0.8 2.4 V ID=0.1mA, VDS= V
100 nA
1
100 (2)
µA
µA
V
=± 20V, VDS=0V
GS
VDS=90V, VGS=0V
V
=72V, VGS=0V,
DS
T=125°C
10 mA VDS=25 V, VGS=10V
250
2mSV
Ω
VGS=10V,ID=5mA
=25V,ID=10mA
DS
6.5 pF
3pFVDS=25 V, VGS=0V
f=1MHz
0.65 pF
0.3 ns
0.5 ns
0.35 ns
V
≈25V, ID=5mA
DD
0.5 ns
3-358
GS
(
1
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TYPICAL CHARACTERISTICS
ZVN1409A
70
60
A)
50
m
t (
n
40
30
Curre
ain
20
Dr
-
D
10
I
0
10 20 30 40 50
VDS - Drain Source Voltage (Volts)
Output Characteristics
10
8
6
Voltage (Volts)
4
2
Drain Source
0
DS-
V
246810
VGS-Gate Source Voltage (Volts)
Vo ltag e Sa turation Characteristics
VGS=
10V
8V
6V
5V
4V
3V
ID=
24mA
18mA
12mA
50
40
A)
(m
t
30
en
r
r
u
20
C
n
i
a
Dr
10
-
D
I
0
0246810
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
50
40
30
20
-Drain Current (mA)
10
D
I
02 4 6 810
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
VDS=
10V
VGS=
10V
8V
6V
5V
4V
3V
)
1000
Ω
(
500
-Drain Source Resistance
100
DS
1
R
VGS=4V 10V
ID-Drain Current (mA)
On-resistance v drain current
5V
6V
8V
10 100
h)
S(t
G
nd V
a
DS(on)
R
d
ise
mal
r
No
Normalised R
3-359
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-40
-80
G
ate
-20 0 20 40 60 80
Drai
es
e R
rc
u
o
-S
n
T
h
res
h
o
l
d
)
n
o
S(
D
e R
c
tan
s
i
VGS=10V
ID=5mA
VGS=VDS
ID=1mA
V
o
l
t
ag
e
V
GS(
th
100 140 160
120
)
Tj-Junction Temperature (C°)
DS(on)
and V
GS(th)
vs Temperature