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SOT323 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 1 – DECEMBER 1998 ✪
PARTMARKING DETAIL — T3
ABSOLUTE MAXIMUM RATINGS.
PARAM ET ER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
ZUMTS20
30 V
20 V
4V
25 mA
25 mA
330 mW
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Base-Emitter Voltage V
Static Forward
Current Transfer Ratio
Transition Frequency f
Feedback Capacitance C
Collector Capacitance C
I
h
CBO
BE
FE
T
re
TC
10010nA
µA
VCB=20V, IE=0
V
=20V, IE=0,
CB
T
=100°C
amb
740 900 mV IC=7mA, VCE=10V*
40 85 IC=7mA, VCE=10V*
275 450 MHz IC=5mA, VCE=10V
f=100MHz
0.35 0.40 pF IC=1mA, VCE=10V
f=1MHz
0.8 pF IE=Ie=0, VCB=10V
f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%