Zetex ZUMTS17, ZUMTS17H Datasheet
SOT323 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 1 – DECEMBER 1998
ZUMTS17
ZUMTS17H
PARTMARKING DETAIL — ZUMTS17 - T4
ZUMTS17H - T4H
ABSOLUTE MAXIMUM RATINGS.
PARAM ET ER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
I
h
CBO
FE
25
20
10
10
150
125
nAµAVCB=10V, IE=0
ZUMTS17H 70 200 I
Transition
Frequency
Feedback Capacitance -C
Collector Capacitance C
Emitter Capacitance C
f
T
re
Tc
Te
1.0
1.3
GHz
GHz
0.85 pF IC=2.0mA, VCE=5V, f=1MHz
1.5 pF IE=Ie=0, VCB=10V,
2.0 pF IC=Ic=0, VEB=5.0V,
Noise Figure N 4.5 dB I
Intermodulation
Distortion
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
d
im
-45 dB IC=10mA, VCE=6.0V
25 V
15 V
2.5 V
50 mA
25 mA
330 mW
-55 to +150 °C
V
=10V, IE=0,
CB
T
= 100°C
amb
IC=2.0mA, VCE=1.0V
I
=25mA, VCE=1.0V
C
=2.0mA, VCE=1.0V
C
IC=2.0mA, VCE=5.0V
f=500MHz
I
=25mA, VCE=5.0V
C
f=500MHz
f=1MHz
f=1MHz
=2.0mA, VCE=5.0V
C
R
=50Ω, f=500MHz
S
R
=37.5Ω,T
L
V
=100mV at fp=183MHz
o
V
=100mV at fq=200MHz
o
measured at f
amb
(2q-p)
=25°C
=217MHz
ZUMTS17
ZUMTS17H
3
2
- (GHz)
T
f
1
0
f=400MHz
110
Collector Current (mA)
IC -
f
T
TYPICAL CHARACTERISTICS
80
n
i
60
Ga
ised
l
40
- Norma
20
E
F
h
1
µ
10µ
IC - Collector Current (A)
v IC
VCE=10V
VCE=5V
1000.1
1000
VCE=10V
100
µ
hFEv IC
100m
10m
1m
10
f=1MHz
20
V
CE
- (V)
30
2.0
)
F
p
1.5
(
-
RE
1.0
C
0.5
0
CREv VCE
3 -
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