Zetex ZUMTQ31A Datasheet
SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTORS
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL – T11
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Collector-Base
Capacitance
Input Capacitance C
Noise Figure N 6.0 dB I
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
ibo
30 V
15 V IC=3mA, IB=0*
3V
100 IC=3mA, VCE=1V
600 MHz IC=4mA, VCE=10V
CBO
CEO
EBO
C
B
tot
j:Tstg
= 25°C).
amb
0.01
µA
0.4 V IC=10mA, IB=1mA
1.0 V IC=10mA, IB=1mA
1.7 pF VCB=10V, f=1MHz
2.0 pF VCB=0.5V, f=1MHz
ZUMTQ31A
30 V
15 V
3V
100 mA
50 mA
330 mW
-55 to +150 °C
I
=1.0µA, I
C
=10µA, I
I
E
VCB=15V, IE=0
f=100MHz
=1mA, VCE=6V
C
R
=400Ω, f=60MHz
s
=0
E
=0
C
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